Datasheet > 10-PY12B2A040MS-LP25L08Y

10-PY12B2A040MS-LP25L08Y

更新时间： 2024-10-29 11:14:31

品牌	Logo	应用领域
VINCOTECH		/
页数	文件大小	规格书
19页	7202K
描述
High Blocking Voltage with low drain source on state resistance;High speed SiC-MOSFET technology;Resistant to Latch-up

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10-PY12B2A040MS-LP25L08Y

datasheet

Characteristic Values

Symbol

Parameter

Conditions

Values

Typ

Unit

V_CE[V] I_C[A]

V_DS[V] I_D[A] T_j[°C]

V_GE[V]

V_GS[V]

Min

Max

V_F[V]

I_F[A]

Boost Diode

Static

1,41

1,66

1,78

2⁽¹⁾

V_F

I_R

Forward voltage

125

150

Reverse leakage current

Thermal

V_r= 1200 V

900

µA

λ_paste= 3,4 W/mK

(PSX)

(2)

R_th(j-s)

Thermal resistance junction to sink

Dynamic

0,85

K/W

12,59

16,94

18,05

14,2

I_RRM

Peak recovery current

125

150

t_rr

Reverse recovery time

125

150

13,57

13,59

0,173

0,218

0,224

0,027

0,05

di/dt=2054 A/µs

di/dt=2801 A/µs

di/dt=2985 A/µs

Q_r

Recovered charge

0/18

700

125

150

μC

E_rec

Reverse recovered energy

Peak rate of fall of recovery current

125

150

mWs

A/µs

0,053

2590

3537

3695

(di_rf/dt)_max

125

150

31 Mar. 2021 / Revision 1

1 2 3 456 7 8...19

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