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10-PY12B2A040MS-LP25L08Y PDF预览

10-PY12B2A040MS-LP25L08Y

更新时间: 2024-10-29 11:14:31
品牌 Logo 应用领域
VINCOTECH /
页数 文件大小 规格书
19页 7202K
描述
High Blocking Voltage with low drain source on state resistance;High speed SiC-MOSFET technology;Resistant to Latch-up

10-PY12B2A040MS-LP25L08Y 数据手册

 浏览型号10-PY12B2A040MS-LP25L08Y的Datasheet PDF文件第1页浏览型号10-PY12B2A040MS-LP25L08Y的Datasheet PDF文件第2页浏览型号10-PY12B2A040MS-LP25L08Y的Datasheet PDF文件第4页浏览型号10-PY12B2A040MS-LP25L08Y的Datasheet PDF文件第5页浏览型号10-PY12B2A040MS-LP25L08Y的Datasheet PDF文件第6页浏览型号10-PY12B2A040MS-LP25L08Y的Datasheet PDF文件第7页 
10-PY12B2A040MS-LP25L08Y  
datasheet  
Maximum Ratings  
Tj = 25 °C, unless otherwise specified  
Parameter  
Symbol  
Conditions  
Value  
Unit  
Module Properties  
Thermal Properties  
Tstg  
Tjop  
Storage temperature  
-40…+125  
°C  
°C  
Operation temperature under switching  
condition  
-40…+(Tjmax - 25)  
Isolation Properties  
Isolation voltage  
Creepage distance  
Clearance  
Visol  
DC Test Voltage*  
tp = 2 s  
6000  
>12,7  
12,02  
≥ 600  
V
mm  
mm  
Comparative Tracking Index  
*100 % tested in production  
CTI  
Copyright Vincotech  
3
31 Mar. 2021 / Revision 1  

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