Datasheet > 10-PY12B2A040MS-LP25L08Y

10-PY12B2A040MS-LP25L08Y

更新时间： 2023-09-03 20:35:45

品牌	Logo	应用领域
VINCOTECH		/
页数	文件大小	规格书
19页	7202K
描述
High Blocking Voltage with low drain source on state resistance;High speed SiC-MOSFET technology;Resistant to Latch-up

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10-PY12B2A040MS-LP25L08Y

datasheet

Characteristic Values

Symbol

Parameter

Conditions

Values

Typ

Unit

V_CE[V] I_C[A]

V_DS[V] I_D[A] T_j[°C]

V_F[V] I_F[A]

V_GE[V]

V_GS[V]

Min

Max

Boost Switch

Static

50⁽¹⁾

r_DS(on)

Drain-source on-state resistance

125

150

mΩ

V_GS(th)

I_GSS

I_DSS

r_g

Gate-source threshold voltage

Gate to Source Leakage Current

Zero Gate Voltage Drain Current

Internal gate resistance

Short-circuit input capacitance

Reverse transfer capacitance

Thermal

0,003

3,6

4,6

5,6

400

100

µA

Ω

1200

1,5

4000

C_iss

C_rss

λ_paste= 3,4 W/mK

(PSX)

(2)

R_th(j-s)

Thermal resistance junction to sink

Dynamic

1,07

K/W

22,4

17,92

17,28

16,32

12,8

t_d(on)

Turn-on delay time

Rise time

125

150

t_r

125

150

12,48

70,08

83,84

88,32

17,14

18,37

18,4

R_gon= 8 Ω

R_goff= 8 Ω

t_d(off)

Turn-off delay time

Fall time

125

150

0/18

700

t_f

125

150

Q_rFWD=0,173 µC

Q_rFWD=0,218 µC

Q_rFWD=0,224 µC

0,818

0,631

0,609

0,131

0,128

0,131

E_on

Turn-on energy (per pulse)

Turn-off energy (per pulse)

125

150

mWs

E_off

125

150

31 Mar. 2021 / Revision 1

1 2 345 6 7...19

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