Datasheet > 10-PY07NIA150S504-L365F54Y

10-PY07NIA150S504-L365F54Y

更新时间： 2023-09-03 20:39:02

品牌	Logo	应用领域
VINCOTECH		/
页数	文件大小	规格书
29页	9353K
描述
High speed and smooth switching;Low gate charge;Very low collector emitter saturation voltage

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10-PY07NIA150S504-L365F54Y 数据手册

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10-PY07NIA150S504-L365F54Y

datasheet

Maximum Ratings

T_j= 25 °C, unless otherwise specified

Parameter

Symbol

Conditions

Value

Unit

Buck Switch

V_CES

Collector-emitter voltage

650

105

450

145

±20

175

I_C

Collector current (DC current)

Repetitive peak collector current

Total power dissipation

T_j= T_jmax

T_s= 80 °C

I_CRM

t_plimited by T_jmax

T_j= T_jmax

P_tot

V_GES

Gate-emitter voltage

T_jmax

Maximum junction temperature

°C

Buck Diode

V_RRM

Peak repetitive reverse voltage

650

101

300

127

175

I_F

Forward current (DC current)

Repetitive peak forward current

Total power dissipation

T_j= T_jmax

T_s= 80 °C

I_FRM

t_plimited by T_jmax

T_j= T_jmax

P_tot

°C

T_jmax

Maximum junction temperature

Boost Switch

V_CES

Collector-emitter voltage

650

105

450

145

±20

175

I_C

Collector current (DC current)

Repetitive peak collector current

Total power dissipation

T_j= T_jmax

T_s= 80 °C

I_CRM

t_plimited by T_jmax

T_j= T_jmax

P_tot

V_GES

Gate-emitter voltage

T_jmax

Maximum junction temperature

°C

27 Sep. 2021 / Revision 2

123 4 5 6 7...29

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