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10-PY12B2A032ME-L387L28T PDF预览

10-PY12B2A032ME-L387L28T

更新时间: 2024-09-24 17:02:11
品牌 Logo 应用领域
VINCOTECH /
页数 文件大小 规格书
22页 7089K
描述
SiC MOSFET High Blocking Voltage with low drain source on state resistance High speed SiC-MOSFET technology Resistant to Latch-up

10-PY12B2A032ME-L387L28T 数据手册

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10-PY12B2A032ME-L387L28T  
datasheet  
flowBOOST 1 dual SiC  
1200 V / 32 mΩ  
Topology features  
flow 1 12 mm housing  
● Kelvin Emitter for improved switching performance  
● Dual Booster  
● Bypass Diode  
● Integrated DC capacitor  
● Temperature sensor  
Component features  
● High Blocking Voltage with low drain source on state resistance  
● High speed SiC-MOSFET technology  
● Resistant to Latch-up  
Housing features  
● Base isolation: Al2O3  
● Convex shaped substrate for superior thermal contact  
● Thermo-mechanical push-and-pull force relief  
● Press-fit pin  
Schematic  
● Reliable cold welding connection  
Target applications  
● Energy Storage Systems  
● Solar Inverters  
● UPS  
Types  
● 10-PY12B2A032ME-L387L28T  
Copyright Vincotech  
1
26 Jun. 2023 / Revision 1  

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