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10-PY126PA020MS-L227F08Y PDF预览

10-PY126PA020MS-L227F08Y

更新时间: 2024-05-23 22:22:45
品牌 Logo 应用领域
VINCOTECH /
页数 文件大小 规格书
17页 7092K
描述
SiC MOSFET High Blocking Voltage with low drain source on state resistance High speed SiC-MOSFET technology Resistant to Latch-up

10-PY126PA020MS-L227F08Y 数据手册

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10-PY126PA020MS-L227F08Y  
datasheet  
flowPACK 1 SiC  
1200 V / 20 mΩ  
Topology features  
flow 1 12 mm housing  
● 3xHalf Bridge  
● Open Emitter configuration  
● Kelvin Emitter for improved switching performance  
● Temperature sensor  
Component features  
● High Blocking Voltage with low drain source on state resistance  
● High speed SiC-MOSFET technology  
● Resistant to Latch-up  
Housing features  
● Base isolation: Al2O3  
● Convex shaped substrate for superior thermal contact  
● Thermo-mechanical push-and-pull force relief  
● Press-fit pin  
Schematic  
● Reliable cold welding connection  
Target applications  
● Charging Stations  
● Elevator Drives  
● Embedded Drives  
● Industrial Drives  
Types  
● 10-PY126PA020MS-L227F08Y  
Copyright Vincotech  
1
29 Nov. 2023 / Revision 1  

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