Datasheet > 10-PY126PA020MR-L227F28Y

10-PY126PA020MR-L227F28Y

更新时间： 2024-09-24 11:08:11

品牌	Logo	应用领域
VINCOTECH		/
页数	文件大小	规格书
16页	7504K
描述
Easy paralleling;Low on-resistance;Fast switching speed;Fast recovery body diode

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10-PY126PA020MR-L227F28Y 数据手册

10-PY126PA020MR-L227F28Y

datasheet

flowPACK 1 SiC

1200 V / 20 mΩ

Features

flow 1 12 mm housing

● Rohm Silicon Carbide Power MOSFET, Trench Technology

● Sixpack with three separated legs

● Solderless Press-fit Mounting Technology

Schematic

Target applications

● Battery Charger

Types

● 10-PY126PA020MR-L227F28Y

30 Nov. 2021 / Revision 4

12 3 4 5 6 7...16

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型号	品牌	获取价格	描述	数据表
10-PY126PA020MS-L227F08Y	VINCOTECH	获取价格	SiC MOSFET High Blocking Voltage with low drain source on state resistance High speed SiC
10-PY126PA040MR-L226F28Y	VINCOTECH	获取价格	Easy paralleling;Low on-resistance;Fast switching speed;Fast recovery body diode
10-PY126PA050M7-L828F08Y	VINCOTECH	获取价格	Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive tem
10-PY126TA025SH-L826F68Y	VINCOTECH	获取价格	Easy paralleling;High speed switching;Low switching losses
10-PY126TA040SH-L827F68Y	VINCOTECH	获取价格	Easy paralleling;High speed switching;Low switching losses
10-PY126TA050SH-L828F68Y	VINCOTECH	获取价格	Easy paralleling;High speed switching;Low switching losses
10-PY126TA075SH-L829F68Y	VINCOTECH	获取价格	Easy paralleling;High speed switching;Low switching losses
10-PY12B2A032ME-L387L28T	VINCOTECH	获取价格	SiC MOSFET High Blocking Voltage with low drain source on state resistance High speed SiC
10-PY12B2A040MS-LP25L08Y	VINCOTECH	获取价格	High Blocking Voltage with low drain source on state resistance;High speed SiC-MOSFET tech
10-PY12M3A015SH01-M743F68Y	VINCOTECH	获取价格	Easy paralleling;High speed switching;Low switching losses