Datasheet > 10-FY07NIA150S502-L365F58

10-FY07NIA150S502-L365F58

更新时间： 2023-09-03 20:39:17

品牌	Logo	应用领域
VINCOTECH		/
页数	文件大小	规格书
29页	8830K
描述
High speed and smooth switching;Low gate charge;Very low collector emitter saturation voltage

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10-FY07NIA150S502-L365F58

datasheet

Characteristic Values

Symbol

Parameter

Conditions

Values

Typ

Unit

V_CE[V] I_C[A]

V_DS[V] I_D[A] T_j[°C]

V_GE[V]

V_GS[V]

Min

Max

V_F[V]

I_F[A]

Buck Diode

Static

1,53

1,49

1,47

1,92⁽¹⁾

V_F

I_R

Forward voltage

150

125

150

Reverse leakage current

Thermal

V_r= 650 V

7,6

µA

λ_paste= 3,4 W/mK

(PSX)

(2)

R_th(j-s)

Thermal resistance junction to sink

Dynamic

0,75

K/W

123,93

158,19

167,21

43,67

73,66

84,84

3,35

I_RRM

Peak recovery current

125

150

t_rr

Reverse recovery time

125

150

di/dt=7165 A/µs

di/dt=8521 A/µs

di/dt=7698 A/µs

Q_r

Recovered charge

-5/15

350

125

150

6,78

μC

7,78

0,87

E_rec

Reverse recovered energy

Peak rate of fall of recovery current

125

150

1,72

mWs

A/µs

1,92

3889

3024

3127

(di_rf/dt)_max

125

150

27 Sep. 2021 / Revision 3

1 2 3 456 7 8...29

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