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10-FY07NIA150S502-L365F58 PDF预览

10-FY07NIA150S502-L365F58

更新时间: 2023-09-03 20:39:17
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VINCOTECH /
页数 文件大小 规格书
29页 8830K
描述
High speed and smooth switching;Low gate charge;Very low collector emitter saturation voltage

10-FY07NIA150S502-L365F58 数据手册

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10-FY07NIA150S502-L365F58  
datasheet  
Characteristic Values  
Symbol  
Parameter  
Conditions  
Values  
Typ  
Unit  
VCE [V] IC [A]  
VDS [V] ID [A] Tj [°C]  
VGE [V]  
VGS [V]  
Min  
Max  
VF [V]  
IF [A]  
Buck Switch  
Static  
VGE(th)  
Gate-emitter threshold voltage  
VCE = VGE  
0,0015  
150  
25  
3,2  
4
4,8  
V
V
25  
1,43  
1,52  
1,55  
1,75(1)  
VCEsat  
Collector-emitter saturation voltage  
15  
125  
150  
ICES  
IGES  
rg  
Collector-emitter cut-off current  
Gate-emitter leakage current  
Internal gate resistance  
Input capacitance  
0
650  
0
25  
25  
100  
200  
µA  
nA  
Ω
20  
None  
9000  
260  
34  
Cies  
Coes  
Cres  
Qg  
pF  
pF  
pF  
nC  
Output capacitance  
f = 1 Mhz  
0
25  
25  
25  
Reverse transfer capacitance  
Gate charge  
VCC = 520 V  
15  
150  
328  
Thermal  
λpaste = 3,4 W/mK  
(PSX)  
(2)  
Rth(j-s)  
Thermal resistance junction to sink  
Dynamic  
0,65  
K/W  
25  
47,8  
50  
td(on)  
Turn-on delay time  
Rise time  
125  
150  
25  
ns  
ns  
49,4  
8,6  
tr  
125  
150  
25  
10  
10,4  
147  
Rgon = 2 Ω  
Rgoff = 2 Ω  
td(off)  
Turn-off delay time  
Fall time  
125  
150  
25  
170  
ns  
176,4  
10,58  
19,16  
22,34  
0,346  
0,608  
0,705  
1,07  
1,56  
1,74  
-5/15  
350  
90  
tf  
125  
150  
25  
ns  
QrFWD=3,35 µC  
QrFWD=6,78 µC  
QrFWD=7,78 µC  
Eon  
Turn-on energy (per pulse)  
Turn-off energy (per pulse)  
125  
150  
25  
mWs  
mWs  
Eoff  
125  
150  
Copyright Vincotech  
4
27 Sep. 2021 / Revision 3  

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