Datasheet > 10-F107NIB150SG06-M136F39

10-F107NIB150SG06-M136F39

更新时间： 2023-09-03 20:25:07

品牌	Logo	应用领域
VINCOTECH		/
页数	文件大小	规格书
29页	1170K
描述
High speed switching;Low EMI;Low turn-off losses;Low collector emitter saturation voltage

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10-F107NIB150SG06-M136F39 数据手册

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10-F107NIB150SG06-M136F39

10-P107NIB150SG06-M136F39Y

datasheet

Characteristic Values

Parameter

Symbol

Conditions

Value

Typ

Unit

V_CE[V] I_C[A]

V_GE[V]

V_GS[V]

V_DS[V] I_D[A] T_j[°C]

V_F[V] I_F[A]

Min

Max

Buck Diode

Static

1,52

1,47

1,45

1,92

8,4

V_F

I_R

125

150

Forward voltage

160

Reverse leakage current

650

µA

Thermal

λ_paste= 3,4 W/mK

(PSX)

Thermal resistance junction to sink

R_th(j-s)

0,39

K/W

Dynamic

100

143

152

I_RRM

125

150

Peak recovery current

t_rr

Q_r

Reverse recovery time

125

150

125

150

125

150

125

150

105

di/dt = 5294 A/μs

di/dt = 5307 A/μs ±15

di/dt = 4893 A/μs

4,759

9,056

10,295

1,035

2,055

2,344

2725

2076

1787

350

150

Recovered charge

μC

E_rec

Reverse recovered energy

Peak rate of fall of recovery current

mWs

A/µs

(di_rf/dt)_max

24 Jan. 2019 / Revision 6

1 2 3 456 7 8...29

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