Datasheet > 10-F112R6A050SC-M430E08

10-F112R6A050SC-M430E08

更新时间： 2024-11-26 01:19:23

品牌	Logo	应用领域
VINCOTECH		/
页数	文件大小	规格书
6页	615K
描述
Very compact housing, easy to route

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10-F112R6A050SC-M430E08 数据手册

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F112R6A050SC

target datasheet

flowPACK 1

1200V/50A

Features

flow1 housing

● Inverter, blocking diodes

● Very compact housing, easy to route

● IGBT4 technology

Target Applications

Schematic

● Power Regeneration

Types

● 10-F112R6A050SC-M430E08

● 10-F112R6A050SC01-M430E18

Maximum Ratings

T_j=25°C, unless otherwise specified

Condition

Parameter

Symbol

Value

Unit

Blocking Diode

V_RRM

I_FAV

Repetitive peak reverse voltage

DC forward current

1600

T_j=T_jmax

t_p=10ms

T_j=T_jmax

T_h=80°C

T_j=25°C

T_h=80°C

I_FSM

Surge forward current

I2t-value

700

2450

I²t

A²s

P_tot

Power dissipation per Diode

Maximum Junction Temperature

T_jmax

150

°C

Inverter Transistor

V_CE

I_C

Collector-emitter break down voltage

DC collector current

1200

T_j=T_jmax

T_h=80°C

I_Cpulse

t_plimited by T_jmax

Repetitive peak collector current

Turn off safe operating area

Power dissipation per IGBT

Gate-emitter peak voltage

Short circuit ratings

150

100

±20

VCE ≤ 1200V, Tj ≤ Top max

P_tot

T_j=T_jmax

T_h=80°C

V_GE

t_SC

T_j≤150°C

μs

V_CC

V_GE=15V

900

T_jmax

Maximum Junction Temperature

175

°C

Revision: 3

12 3 4 5 6

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