Datasheet > 10-F112PNA035M7-P589C79

10-F112PNA035M7-P589C79

更新时间： 2023-09-03 20:25:13

品牌	Logo	应用领域
VINCOTECH		/
页数	文件大小	规格书
18页	3630K
描述
Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current;Switching optimized for EMC

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10-F112PNA035M7-P589C79 数据手册

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10-FY12PNA035M7-P589C78

10-F112PNA035M7-P589C79

datasheet

1200 V / 35 A

flow PIM 1

Features

flow 1 housing

● IGBT M7 with low V _CEsatand improved EMC behavior

● Open emitter configuration

● Compact and low inductive design

● Built-in NTC

12 mm

17 mm

Schematic

Target applications

● Industrial Drives

Types

● 10-FY12PNA035M7-P589C78

● 10-F112PNA035M7-P589C79

Maximum Ratings

Tj = 25 °C, unless otherwise specified

Parameter

Symbol

Condition

Value

Unit

Rectifier Diode

V_RRM

Peak repetitive reverse voltage

1600

I_F

I_FSM

I²t

Continuous (direct) forward current

Surge (non-repetitive) forward current

Surge current capability

350

610

50 Hz Single Half Sine Wave

t_p= 10 ms

T_j= 150 °C

T_s= 80 °C

A²s

°C

P_tot

T_jmax

Total power dissipation

T_j= T_jmax

Maximum junction temperature

150

13 Jun. 2019 / Revision 2

12 3 4 5 6 7...18

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