Datasheet > 10-F107NIB150SG06-M136F39

10-F107NIB150SG06-M136F39

更新时间： 2023-09-03 20:25:07

品牌	Logo	应用领域
VINCOTECH		/
页数	文件大小	规格书
29页	1170K
描述
High speed switching;Low EMI;Low turn-off losses;Low collector emitter saturation voltage

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10-F107NIB150SG06-M136F39 数据手册

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10-F107NIB150SG06-M136F39

10-P107NIB150SG06-M136F39Y

datasheet

Characteristic Values

Parameter

Symbol

Conditions

Value

Typ

Unit

V_CE[V] I_C[A]

V_GE[V]

V_GS[V]

V_DS[V] I_D[A] T_j[°C]

V_F[V] I_F[A]

Min

Max

Boost Diode

Static

100

1,20

1,77

1,57

1,9

V_F

I_R

Forward voltage

Reverse leakage current

Thermal

150

650

µA

λ_paste= 3,4 W/mK

(PSX)

Thermal resistance junction to sink

R_th(j-s)

0,47

K/W

Dynamic

150

114

133

I_RRM

Peak recovery current

Reverse recovery time

Recovered charge

t_rr

Q_r

290

di/dt = 7150 A/μs

di/dt = 5023 A/μs

5,92

12,85

1,65

3,68

559

±15

350

150

μC

Reverse recovered energy

Peak rate of fall of recovery current

E_rec

mWs

A/µs

(di_rf/dt)_max

676

Boost Sw.Inv.Diode

Static

150

1,2

1,77

1,54

1,9

V_F

Forward voltage

100

Thermal

λ_paste= 3,4 W/mK

(PSX)

Thermal resistance junction to sink

R_th(j-s)

0,46

K/W

Thermistor

Rated resistance

Δ_R/R

100

kΩ

Deviation of R₁₀₀

Power dissipation

Power dissipation constant

B-value

R₁₀₀= 1484 Ω

-5

mW/K

1,5

B_(25/50)

Tol. ±1 %

3962

4000

B_(25/100)

B-value

Vincotech NTC Reference

24 Jan. 2019 / Revision 6

1...4 5 678 9 10...29

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