Datasheet > 10-EY122PA008ME-LU38F08T

10-EY122PA008ME-LU38F08T

更新时间： 2023-09-03 20:38:41

品牌	Logo	应用领域
VINCOTECH		/
页数	文件大小	规格书
16页	6945K
描述
High Blocking Voltage with low drain source on state resistance;High speed SiC-MOSFET technology;Resistant to Latch-up

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10-EY122PA008ME-LU38F08T

datasheet

Characteristic Values

Symbol

Parameter

Conditions

Values

Typ

Unit

V_CE[V] I_C[A]

V_DS[V] I_D[A] T_j[°C]

V_GE[V]

V_GS[V]

Min

Max

V_F[V]

I_F[A]

Dynamic

74,24

65,6

t_d(on)

Turn-on delay time

125

150

64,64

t_r

t_d(off)

t_f

Rise time

125

150

34,56

33,92

162,24

179,52

184,64

16,92

17,26

17,77

5,64

R_gon= 8 Ω

R_goff= 8 Ω

Turn-off delay time

125

150

Fall time

125

150

Q_rFWD=0,828 µC

Q_rFWD=2,16 µC

Q_rFWD=2,64 µC

E_on

Turn-on energy (per pulse)

Turn-off energy (per pulse)

Peak recovery current

Reverse recovery time

Recovered charge

125

150

5,67

mWs

5,78

3,06

E_off

-4/15

600

160

125

150

2,99

48,54

82,05

94,28

22,84

45,41

45,5

I_RRM

125

150

t_rr

125

150

0,828

2,16

di/dt=4859 A/µs

di/dt=5582 A/µs

di/dt=5668 A/µs

Q_r

125

150

μC

2,64

0,188

0,536

0,679

5861

4376

4597

E_rec

Reverse recovered energy

Peak rate of fall of recovery current

125

150

mWs

A/µs

(di_rf/dt)_max

125

150

22 Dec. 2020 / Revision 1

1 2 345 6 7...16

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