Datasheet > 06035J6R8BS

06035J6R8BS

更新时间： 2024-09-17 01:11:27

品牌	Logo	应用领域
恩智浦 - NXP		/
页数	文件大小	规格书
24页	478K
描述
Heterojunction Bipolar Transistor Technology (InGaP HBT)

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06035J6R8BS 数据手册

Document Number: MMG3006NT1

Rev. 6, 12/2017

NXP Semiconductors

Technical Data

Heterojunction Bipolar Transistor

Technology (InGaP HBT)

MMG3006NT1

Broadband High Linearity Amplifier

The MMG3006NT1 is a general purpose amplifier that is internally input

prematched and designed for a broad range of Class A, small--signal, high

linearity, general purpose applications. It is suitable for applications with

frequencies from 400 to 2400 MHz such as cellular, PCS, WLL, PHS,

VHF, UHF, UMTS and general small--signal RF.

400--2400 MHz, 17.5 dB

33 dBm

InGaP HBT GPA

Features



Frequency: 400--2400 MHz

P1dB: 33 dBm @ 900 MHz

Small--signal gain: 17.5 dB @ 900 MHz

Third order output intercept point: 49 dBm @ 900 MHz

Single 5 V supply

QFN 4  4--16L

Internally input prematched to 50 ohms

Table 1. Typical Performance ⁽¹⁾

Table 2. Maximum Ratings

Rating

Supply Voltage

Symbol

Value

Unit

900

1960 2140

MHz Unit

Characteristic

Symbol MHz MHz

1400

Small--Signal Gain

(S21)

17.5

-- 8

-- 1 2

-- 1 8

Supply Current

dBm

C

RF Input Power

Input Return Loss

(S11)

IRL

-- 9

Storage Temperature Range

Junction Temperature

stg

--65 to +150

175

C

Output Return Loss

(S22)

ORL

P1db

OIP3

-- 1 3

-- 1 4

Power Output @1dB

Compression

dBm

Third Order Output

Intercept Point

1. V = 5 Vdc, T = 25C, 50 ohm system, application circuit

tuned for specified frequency.

Table 3. Thermal Characteristics

(2)

Characteristic

Symbol

Value

Unit

C/W

Thermal Resistance, Junction to Case



7.8

Case Temperature 89C, 5 Vdc, 850 mA, no RF applied

2. Refer to AN1955,Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.nxp.com/RF and search for AN1955.

 2008, 2010–2011, 2014, 2017 NXP B.V.

MMG3006NT1

RF Device Data

NXP Semiconductors

12 3 4 5 6 7...24

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