Datasheet > 06035J0R4BBS

06035J0R4BBS

更新时间： 2024-09-15 01:03:55

品牌	Logo	应用领域
恩智浦 - NXP		/
页数	文件大小	规格书
15页	468K
描述
Heterostructure Field Effect Transistor (GaAs HFET)

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06035J0R4BBS 数据手册

Document Number: MMH3111NT1

Rev. 4.1, 10/2014

Freescale Semiconductor

Technical Data

Heterostructure Field Effect

Transistor (GaAs HFET)

MMH3111NT1

Broadband High Linearity Amplifier

The MMH3111NT1 is a general purpose amplifier that is internally

input and output prematched. It is designed for a broad range of Class A,

small--signal, high linearity, general purpose applications. It is suitable

for applications with frequencies from 250 to 4000 MHz such as cellular,

PCS, WLL, PHS, CATV, VHF, UHF, UMTS and general small--signal RF.

250--4000 MHz, 12 dB

22.5 dBm

GaAs HFET GPA

Features



Frequency: 250 to 4000 MHz

P1dB: 22.5 dBm @ 900 MHz

Small--Signal Gain: 12 dB @ 900 MHz

Third Order Output Intercept Point: 44 dBm @ 900 MHz

Single 5 V Supply

Internally Prematched to 50 Ohms

Internally Biased

Cost--effective SOT--89 Surface Mount Plastic Package

In Tape and Reel. T1 Suffix = 1,000 Units, 12 mm Tape Width, 7--inch Reel.

SOT--89

Table 1. Typical Performance ⁽¹⁾

Table 2. Maximum Ratings

Rating

Supply Voltage

Symbol

Value

Unit

900

Symbol MHz

2140 3500

MHz MHz Unit

Characteristic

300

Small--Signal Gain

(S21)

-- 1 4

22.5

11.3

-- 1 5

-- 1 9

-- 1 6

-- 1 4

Supply Current

dBm

C

RF Input Power

Input Return Loss

(S11)

IRL

ORL

P1dB

OIP3

Storage Temperature Range

Junction Temperature

stg

--65 to +150

150

C

Output Return Loss

(S22)

Power Output @1dB

Compression

dBm

Third Order Output

Intercept Point

1. V = 5 Vdc, T = 25C, 50 ohm system, application circuit tuned

for specified frequency.

Table 3. Thermal Characteristics

(2)

Characteristic

Symbol

Value

Unit

C/W

Thermal Resistance, Junction to Case



37.5

Case Temperature 95C, 5 Vdc, 150 mA, no RF applied

2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.

Select Documentation/Application Notes -- AN1955.

MMH3111NT1

RF Device Data

Freescale Semiconductor, Inc.

12 3 4 5 6 7...15

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