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ZXTN2007GTC PDF预览

ZXTN2007GTC

更新时间: 2024-01-26 01:35:01
品牌 Logo 应用领域
美台 - DIODES 晶体晶体管开关光电二极管
页数 文件大小 规格书
6页 133K
描述
30V NPN MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223

ZXTN2007GTC 技术参数

生命周期:Active零件包装代码:TO-261AA
包装说明:TO-261AA, 4 PIN针数:4
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:5.42外壳连接:COLLECTOR
最大集电极电流 (IC):7 A集电极-发射极最大电压:30 V
配置:SINGLE最小直流电流增益 (hFE):20
JEDEC-95代码:TO-261AAJESD-30 代码:R-PDSO-G4
元件数量:1端子数量:4
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
极性/信道类型:NPN认证状态:Not Qualified
表面贴装:YES端子形式:GULL WING
端子位置:DUAL晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):140 MHz

ZXTN2007GTC 数据手册

 浏览型号ZXTN2007GTC的Datasheet PDF文件第2页浏览型号ZXTN2007GTC的Datasheet PDF文件第3页浏览型号ZXTN2007GTC的Datasheet PDF文件第4页浏览型号ZXTN2007GTC的Datasheet PDF文件第5页浏览型号ZXTN2007GTC的Datasheet PDF文件第6页 
ZXTN2007G  
30V NPN MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223  
SUMMARY  
BVCEO = 30V : RSAT = 28m ; IC = 7A  
DESCRIPTION  
Packaged in the SOT223 outline this new low saturation 30V NPN transistor  
offers extremely low on state losses making it ideal for use in DC-DC circuits  
and various driving and power management functions.  
FEATURES  
SOT223  
Extemely low equivalent on-resistance; RSAT = 28m at 6.5A  
7 amps continuous current  
Up to 20 amps peak current  
Very low saturation voltages  
Excellent hFE characteristics up to 20 amps  
APPLICATIONS  
DC - DC converters  
MOSFET gate drivers  
Charging circuits  
Power switches  
Motor control  
PINOUT  
ORDERING INFORMATION  
DEVICE  
REEL  
SIZE  
TAPE  
WIDTH  
QUANTITY PER  
REEL  
ZXTN2007GTA  
ZXTN2007GTC  
7”  
1,000 units  
4,000 units  
12mm  
embossed  
13"  
TOP VIEW  
DEVICE MARKING  
ZXTN  
2007  
ISSUE 2 - MAY 2006  
1
SEMICONDUCTORS  

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