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ZXMN2088DE6TA PDF预览

ZXMN2088DE6TA

更新时间: 2024-10-30 07:42:35
品牌 Logo 应用领域
美台 - DIODES /
页数 文件大小 规格书
8页 227K
描述
20V Dual SOT23-6 N-channel enhancement mode MOSFET

ZXMN2088DE6TA 数据手册

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Part no.  
ZXMN2088DE6  
20V Dual SOT23-6 N-channel enhancement mode MOSFET  
with low gate drive capability  
Summary  
ID (A)  
V(BR)DSS  
RDS(on) (Ω)  
0.200 @ V = 4.5V  
2.1  
1.9  
1.7  
GS  
20  
0.240 @ V = 2.5V  
GS  
0.310 @ V = 1.8V  
GS  
Description  
This new generation dual n-channel trench MOSFET from Zetex features low on-resistance  
achievable with low gate drive.  
Features  
Low on-resistance  
Low gate drive capability  
SOT23-6 (dual) package  
Applications  
Power Management functions  
Disconnect switches  
Relay driving and load switching  
Ordering information  
Device  
G1  
S2  
G2  
D1  
S1  
D2  
Reel size  
(inches)  
Tape width  
(mm)  
Quantity  
per reel  
ZXMN2088DE6TA  
7
8
3,000  
Pinout – top view  
Device marking  
2088  
Issue 2 - June 2008  
© Diodes Incorporated 2008  
1
www.zetex.com  
www.diodes.com  

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