ZXM41N10F

更新时间： 2024-01-21 05:10:44

品牌	Logo	应用领域
捷特科 - ZETEX		晶体小信号场效应晶体管光电二极管
页数	文件大小	规格书
2页	96K
描述
SOT23 N-CHANNEL ENHANCEMENT MODE VERTICAL D MOSFET

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中文翻译

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技术参数
数据手册

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ZXM41N10F 技术参数

是否Rohs认证：	符合	生命周期：	Transferred
包装说明：	,	Reach Compliance Code：	compliant
风险等级：	5.84	JESD-609代码：	e3
湿度敏感等级：	1	端子面层：	Matte Tin (Sn)

ZXM41N10F 数据手册

ZXM41N10F

SOT23 N-CHANNEL ENHANCEMENT MODE VERTICAL D MOSFET

FEATURES

• BV_DSS= 100V

• Low Threshold

DEVICE MARKING

• 410

ABSOLUTE MAXIMUM RATINGS

PINOUT TOP VIEW

SOT23

PARAMETER

SYMBOL

VALUE

100

UNIT

Drain-source voltage

Drain-gate voltage

100

DGR

Continuous drain current at T

Pulsed drain current

=25°C

170

amb

680

Gate-source voltage

± ±0

tot

Power dissipation at T

=25°C

360

°C

amb

Operating and storage temperature range

T :T

-55 to +150

stg

ELECTRICAL CHARACTERISTICS (at T

= 25°C unless otherwise stated)

amb

PARAMETER

SYMBOL MIN.

TYP.

MAX.

UNIT CONDITIONS

Drain-source breakdown voltage BV

100

0.5

I =0.25mA, V =0V

D GS

DSS

Gate-source threshold voltage

Gate-body leakage

1.5

I =1mA, V = V

DS GS

GS(th)

=±20V, V =0V

GSS

DSS

Zero gate voltage drain current

Static drain-source on-state

500

=100V, V =0V

DS GS

⍀

=4.5V, I =150mA

DS(on)

(1)

resistance

=3V, I =50mA

(1)(2)

Forward transconductance

=25V, I =100mA

(2)

Input capacitance

iss

oss

Common source output

=25V, V =0V, f=1MHz

(2)

capacitance

(2)

Reverse transfer capacitance

rss

(2)(3)

Turn-on delay time

d(on)

(2)(3)

Rise time

≈30V, I =280mA

(2)(3)

Turn-off delay time

d(off)

(2)(3)

Fall time

NOTES:

(1)

Measured under pulsed conditions. Width=300µs. Duty cycle Յ2% (2) Sample test.

Switching times measured with 50Ω source impedance and <5ns rise time on a pulse generator

(3)

ISSUE 2 - OCTOBER 2006

SEMICONDUCTORS

中文翻译

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