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ZXM61N02F PDF预览

ZXM61N02F

更新时间: 2024-11-28 22:06:11
品牌 Logo 应用领域
捷特科 - ZETEX 晶体小信号场效应晶体管光电二极管
页数 文件大小 规格书
7页 219K
描述
20V N-CHANNEL ENHANCEMENT MODE MOSFET

ZXM61N02F 技术参数

是否Rohs认证: 符合生命周期:Transferred
包装说明:SOT-23, 3 PINReach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8541.21.00.95
风险等级:5.11Is Samacsys:N
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:20 V
最大漏极电流 (ID):1.7 A最大漏源导通电阻:0.24 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:R-PDSO-G3
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:N-CHANNEL
认证状态:Not Qualified表面贴装:YES
端子面层:MATTE TIN端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:40
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

ZXM61N02F 数据手册

 浏览型号ZXM61N02F的Datasheet PDF文件第2页浏览型号ZXM61N02F的Datasheet PDF文件第3页浏览型号ZXM61N02F的Datasheet PDF文件第4页浏览型号ZXM61N02F的Datasheet PDF文件第5页浏览型号ZXM61N02F的Datasheet PDF文件第6页浏览型号ZXM61N02F的Datasheet PDF文件第7页 
ZXM61N02F  
20V N-CHANNEL ENHANCEMENT MODE MOSFET  
SUMMARY  
V(BR)DSS=20V; RDS(ON)=0.18; ID=1.7A  
DESCRIPTION  
This new generation of high density MOSFETs from Zetex utilises a unique  
structure that combines the benefits of low on-resistance with fast switching  
speed. This makes them ideal for high efficiency, low voltage, power  
management applications.  
SOT23  
FEATURES  
Low on-resistance  
Fast switching speed  
Low threshold  
Low gate drive  
SOT23 package  
APPLICATIONS  
DC - DC Converters  
Power Management Functions  
Disconnect switches  
Motor control  
ORDERING INFORMATION  
DEVICE  
REEL SIZE  
(inches)  
TAPE WIDTH (mm)  
QUANTITY  
PER REEL  
Top View  
ZXM61N02FTA  
ZXM61N02FTC  
7
8mm embossed  
8mm embossed  
3000 units  
10000 units  
13  
DEVICE MARKING  
N02  
PROVISIONAL ISSUE A - MAY 1999  
57  

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