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ZVP2110CSMTC PDF预览

ZVP2110CSMTC

更新时间: 2024-11-16 13:16:15
品牌 Logo 应用领域
美台 - DIODES 晶体小信号场效应晶体管开关PC
页数 文件大小 规格书
3页 69K
描述
Small Signal Field-Effect Transistor, 0.23A I(D), 100V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92 COMPATIBLE, E-LINE PACKAGE-3

ZVP2110CSMTC 技术参数

生命周期:Obsolete零件包装代码:TO-92
包装说明:SMALL OUTLINE, R-PSSO-G3针数:3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.29.00.95风险等级:5.05
配置:SINGLE最小漏源击穿电压:100 V
最大漏极电流 (ID):0.23 A最大漏源导通电阻:8 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:R-PSSO-G3
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
极性/信道类型:P-CHANNEL认证状态:Not Qualified
表面贴装:YES端子形式:GULL WING
端子位置:SINGLE晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

ZVP2110CSMTC 数据手册

 浏览型号ZVP2110CSMTC的Datasheet PDF文件第2页浏览型号ZVP2110CSMTC的Datasheet PDF文件第3页 
P-CHANNEL ENHANCEMENT  
MODE VERTICAL DMOS FET  
ZVP2110A  
ISSUE 2 – MARCH 94  
FEATURES  
*
*
100 Volt VDS  
RDS(on)=8  
D
G
S
E-Line  
TO92 Com patible  
ABSOLUTE MAXIMUM RATINGS.  
PARAMETER  
S YMBOL  
VDS  
VALUE  
UNIT  
V
Dra in -S o u rce Vo ltag e  
-100  
-230  
Co n tin u o u s Dra in Cu rren t at Ta m b=25°C  
Pu ls e d Dra in Cu rre n t  
ID  
m A  
A
IDM  
-3  
Ga te S o u rce Vo lta g e  
VGS  
V
± 20  
Po w e r Dis s ip a tio n a t Ta m b=25°C  
Op e ratin g a n d S to ra g e Te m p e ratu re Ra n g e  
Pto t  
700  
m W  
°C  
Tj:Ts tg  
-55 to +150  
ELECTRICAL CHARACTERISTICS (at T  
= 25°C unless otherw ise stated).  
am b  
PARAMETER  
S YMBOL MIN. MAX. UNIT CONDITIONS .  
Dra in -S o u rce Bre akd o w n  
Vo lta g e  
BVDS S  
-100  
V
ID=-1m A, VGS=0V  
Ga te-S o u rce Th res h o ld  
Vo lta g e  
VGS (th )  
-1.5  
-3.5  
20  
V
ID=-1m A, VDS= VGS  
Ga te-Bo d y Lea ka g e  
IGS S  
IDS S  
n A  
VGS=± 20V, VDS=0V  
Ze ro Ga te Vo lta g e Dra in  
Cu rre n t  
-1  
-100  
VDS=-100 V, VGS=0  
VDS=-80 V, VGS=0V, T=125°C(2)  
µA  
µA  
On -S ta te Dra in Cu rre n t(1)  
ID(o n )  
-750  
125  
m A  
VDS=-25 V, VGS=-10V  
VGS=-10V,ID=-375m A  
S ta tic Drain -S o u rce On -S ta te RDS (o n )  
Res is ta n ce (1)  
8
Fo rw a rd Tra n s co n d u ctan ce  
(1)(2)  
g fs  
m S  
VDS=-25V,ID=-375m A  
In p u t Ca p a citan ce (2)  
Cis s  
100  
35  
p F  
p F  
Co m m o n S o u rce Ou tp u t  
Cap acita n ce (2)  
Co s s  
VDS=-25V, VGS=0V, f=1MHz  
Reve rs e Tra n s fe r  
Cap acita n ce (2)  
Crs s  
10  
p F  
Tu rn -On De lay Tim e (2)(3)  
Ris e Tim e (2)(3)  
td (o n )  
tr  
td (o ff)  
tf  
7
n s  
n s  
n s  
n s  
15  
12  
15  
VDD -25V, ID=-375m A  
Tu rn -Off De la y Tim e (2)(3)  
Fa ll Tim e (2)(3)  
(1) Measured under pulsed conditions. Width=300µs. Duty cycle 2%  
(2) Sam ple test.  
(
3
)
3-421  
Switching tim es m easured with 50source im pedance and <5ns rise tim e on a pulse generator  

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