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ZVP2120 PDF预览

ZVP2120

更新时间: 2024-10-15 18:09:15
品牌 Logo 应用领域
合科泰 - HOTTECH /
页数 文件大小 规格书
5页 763K
描述
SOT-223

ZVP2120 数据手册

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ZVP2120  
P-CHANNEL HIGH VOLTAGE MOSFET  
FEATURES  
VDS=-200V,RDS(ON)≤25Ω@VGS=-10V,ID=-200mA  
Low On-Resistance  
Fast Switching Speed  
Complementary Type – ZVN2120G  
For Back-lighting and AC-DC Converters Applications  
Surface Mount device  
SOT-223  
MECHANICAL DATA  
Case: SOT-223  
Case Material: Molded Plastic. UL flammability  
Classification Rating: 94V-0  
Weight: 0.112 grams (approximate)  
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)  
Parameter  
Symbol  
VDS  
Value  
-200  
Unit  
V
Drain-source voltage  
VGS  
Gate-source voltage  
±20  
V
Continuous drain current  
Pulsed drain current  
ID  
IDM  
-200  
mA  
A
-1.2  
Power dissipation  
PD  
2.0  
W
°C  
TJ,TSTG  
Operating and Storage temperature  
-55 ~+150  
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)  
Parameter  
OFF CHARACTERISTICS  
Symbol Min Typ Max Unit  
Conditions  
V(BR)DSS  
Drain-Source breakdown voltage  
-200  
V
VGS=0V, ID=-1mA  
VDS=-200V,  
-10  
-100  
-20  
μA  
μA  
nA  
V
VGS=0V,  
Zero gate voltage drain current  
IDSS  
VDS=-160V,  
VDS=0V,  
VGS=0V,TA=125°C(2)  
Gate-body leakage current  
Gate-threshold voltage  
ON CHARACTERISTICS  
IGSS  
VGS=±20V  
VGS(th)  
-1.5  
-300  
50  
-3.5  
VDS=VGS, ID=-1mA  
VDS=-25V,  
VGS=-10V  
On-State Drain Current(1)  
Drain-source on-resistance (1)  
Forward Trans-conductance (1)(2)  
DYNAMIC CHARACTERISTICS  
Input capacitance (2)  
ID(ON)  
RDS(ON)  
gfs  
mA  
Ω
25  
VGS=-10V, ID=-150mA  
mS VDS=-25V, ID=-150mA  
Ciss  
Coss  
Crss  
td(on)  
tr  
100  
25  
7
pF  
VDS=-25V, VGS=0V, f=1MHz  
Output capacitance(2)  
pF  
pF  
nS  
nS  
nS  
nS  
Reverse transfer capacitance(2)  
Turn-on delay time(2,3)  
Turn-on rise time(2,3)  
7
15  
12  
15  
VDD=-25V, ID=-150mA  
Turn-off delay time(2,3)  
Turn-off fall time(2,3)  
td(off)  
tf  
Notes: 1. Measured under pulsed conditions. Width=300μs. Duty cycle ≤2%.  
2. Sample test.  
3. Switching times measured with 50Ω source impedance and <5ns rise time on a pulse generator.  
1 / 5  
©GUANGDONG HOTTECH INDUSTRIAL CO.,LTD  
E-mail:hkt@heketai.com  

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