ZVP2110CSM

更新时间： 2024-01-03 02:59:35

品牌	Logo	应用领域
美台 - DIODES		晶体小信号场效应晶体管开关 PC
页数	文件大小	规格书
3页	69K
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中文翻译

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数据手册

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ZVP2110CSM 数据手册

P-CHANNEL ENHANCEMENT

MODE VERTICAL DMOS FET

ZVP2110A

ISSUE 2 – MARCH 94

FEATURES

100 Volt V_DS

R_DS(on)=8Ω

E-Line

TO92 Com patible

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

S YMBOL

V_DS

VALUE

UNIT

Dra in -S o u rce Vo ltag e

-100

-230

Co n tin u o u s Dra in Cu rren t at T_{a m b}=25°C

Pu ls e d Dra in Cu rre n t

I_D

m A

I_DM

-3

Ga te S o u rce Vo lta g e

V_GS

± 20

Po w e r Dis s ip a tio n a t T_{a m b}=25°C

Op e ratin g a n d S to ra g e Te m p e ratu re Ra n g e

P_{to t}

700

m W

°C

T_j:T_{s tg}

-55 to +150

ELECTRICAL CHARACTERISTICS (at T

= 25°C unless otherw ise stated).

am b

PARAMETER

S YMBOL MIN. MAX. UNIT CONDITIONS .

Dra in -S o u rce Bre akd o w n

Vo lta g e

BV_{DS S}

-100

I_D=-1m A, V_GS=0V

Ga te-S o u rce Th res h o ld

Vo lta g e

V_{GS (th )}

-1.5

-3.5

ID=-1m A, V_DS= V_GS

Ga te-Bo d y Lea ka g e

I_{GS S}

I_{DS S}

n A

V_GS=± 20V, V_DS=0V

Ze ro Ga te Vo lta g e Dra in

Cu rre n t

-1

-100

V_DS=-100 V, V_GS=0

V_DS=-80 V, V_GS=0V, T=125°C(2)

µA

On -S ta te Dra in Cu rre n t(1)

I_{D(o n )}

-750

125

m A

V_DS=-25 V, V_GS=-10V

V_GS=-10V,I_D=-375m A

S ta tic Drain -S o u rce On -S ta te R_{DS (o n )}

Res is ta n ce (1)

Ω

Fo rw a rd Tra n s co n d u ctan ce

(1)(2)

g _fs

m S

V_DS=-25V,I_D=-375m A

In p u t Ca p a citan ce (2)

C_{is s}

100

p F

Co m m o n S o u rce Ou tp u t

Cap acita n ce (2)

C_{o s s}

V_DS=-25V, V_GS=0V, f=1MHz

Reve rs e Tra n s fe r

Cap acita n ce (2)

C_{rs s}

p F

Tu rn -On De lay Tim e (2)(3)

Ris e Tim e (2)(3)

t_{d (o n )}

t_r

t_{d (o ff)}

t_f

n s

V_DD≈-25V, I_D=-375m A

Tu rn -Off De la y Tim e (2)(3)

Fa ll Tim e (2)(3)

(1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2%

(2) Sam ple test.

(

)

3-421

Switching tim es m easured with 50Ω source im pedance and <5ns rise tim e on a pulse generator

12 3

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与ZVP2110CSM相关器件

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ZVP2110CSTOA	ZETEX	获取价格	Small Signal Field-Effect Transistor, 0.23A I(D), 100V, 1-Element, P-Channel, Silicon, Met
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ZVP2110CSTOF	DIODES	获取价格	Small Signal Field-Effect Transistor, 0.23A I(D), 100V, 1-Element, P-Channel, Silicon, Met
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ZVP2110D	ETC	获取价格	TRANSISTOR \| MOSFET \| P-CHANNEL \| 100V V(BR)DSS \| CHIP
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