是否Rohs认证: | 符合 | 生命周期: | Transferred |
包装说明: | CYLINDRICAL, O-PBCY-W3 | Reach Compliance Code: | not_compliant |
ECCN代码: | EAR99 | HTS代码: | 8541.21.00.95 |
风险等级: | 5.03 | Is Samacsys: | N |
配置: | SINGLE | 最小漏源击穿电压: | 200 V |
最大漏极电流 (Abs) (ID): | 0.18 A | 最大漏极电流 (ID): | 0.18 A |
最大漏源导通电阻: | 10 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
最大反馈电容 (Crss): | 7 pF | JESD-30 代码: | O-PBCY-W3 |
JESD-609代码: | e3 | 湿度敏感等级: | 1 |
元件数量: | 1 | 端子数量: | 3 |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 200 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | ROUND |
封装形式: | CYLINDRICAL | 峰值回流温度(摄氏度): | 260 |
极性/信道类型: | N-CHANNEL | 最大功率耗散 (Abs): | 0.7 W |
认证状态: | Not Qualified | 子类别: | FET General Purpose Power |
表面贴装: | NO | 端子面层: | Matte Tin (Sn) |
端子形式: | WIRE | 端子位置: | BOTTOM |
处于峰值回流温度下的最长时间: | 40 | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
ZVN2120AM1 | ETC |
获取价格 |
TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 180MA I(D) | SO | |
ZVN2120ASM | ZETEX |
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Small Signal Field-Effect Transistor, 0.18A I(D), 200V, 1-Element, N-Channel, Silicon, Met | |
ZVN2120ASMTA | ZETEX |
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Small Signal Field-Effect Transistor, 0.18A I(D), 200V, 1-Element, N-Channel, Silicon, Met | |
ZVN2120ASMTC | DIODES |
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暂无描述 | |
ZVN2120ASMTC | ZETEX |
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Small Signal Field-Effect Transistor, 0.18A I(D), 200V, 1-Element, N-Channel, Silicon, Met | |
ZVN2120ASTOA | ZETEX |
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Small Signal Field-Effect Transistor, 0.18A I(D), 200V, 1-Element, N-Channel, Silicon, Met | |
ZVN2120ASTOB | ZETEX |
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Small Signal Field-Effect Transistor, 0.18A I(D), 200V, 1-Element, N-Channel, Silicon, Met | |
ZVN2120ASTZ | ZETEX |
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Small Signal Field-Effect Transistor, 0.18A I(D), 200V, 1-Element, N-Channel, Silicon, Met | |
ZVN2120ASTZ | DIODES |
获取价格 |
Small Signal Field-Effect Transistor, 0.18A I(D), 200V, 1-Element, N-Channel, Silicon, Met | |
ZVN2120B | ETC |
获取价格 |
TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 460MA I(D) | TO-39 |