ZTX454SM

更新时间： 2024-02-21 20:35:52

品牌	Logo	应用领域
美台 - DIODES		晶体小信号双极晶体管局域网
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2页	54K
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ZTX454SM 数据手册

NPN SILICON PLANAR

ZTX454

ZTX455

MEDIUM POWER TRANSISTORS

ISSUE 2 MARCH 1994

FEATURES

140 Volt V_CEO

1 Amp continuous current

P_tot= 1 Watt

E-Line

TO92 Compatible

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

SYMBOL

V_CBO

V_CEO

V_EBO

I_CM

ZTX454

140

ZTX455

160

UNIT

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

120

140

Peak Pulse Current

Continuous Collector Current

Power Dissipation at T_amb=25°C

Operating and Storage Temperature Range

I_C

P_tot

°C

T_j:T_stg

-55 to +200

ELECTRICAL CHARACTERISTICS (at T

= 25°C).

amb

PARAMETER

SYMBOL

ZTX454

ZTX455

UNIT CONDITIONS.

MIN. MAX. MIN. MAX.

Collector-Base

Breakdown Voltage

V_(BR)CBO140

V_CEO(sus)120

160

140

I_C=100µA

I_C=10mA*

I_E=100µA

Collector-Emitter

Sustaining Voltage

Emitter-Base

Breakdown Voltage

V_(BR)EBO

I_CBO

Collector Cut-Off

Current

0.1

0.7

300

V_CB=140V

V_CB=120V

µA

0.1

Emitter Cut-Off

Current

I_EBO

V_EB=4V

µA

Collector-Emitter

Saturation Voltage

V_CE(sat)

h_FE

0.7

1.0

I_C=150mA, I_B=15mA

I_C=200mA, I_B=20mA

Static Forward

Current Transfer

Ratio

100

300

100

I_C=150mA, V_CE=10V*

I_C=200mA, V_CE=1V*

I_C=1A, V_CE=10V*

100

Transition

Frequency

f_T

100

MHz

I_C=50mA, V_CE=10V

f=100MHz

Output Capacitance C_obo

V_CB=10V, f=1MHz

* Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%

Typical

3-179

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