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ZTX457

更新时间: 2024-11-15 22:34:03
品牌 Logo 应用领域
捷特科 - ZETEX 晶体晶体管高压PC局域网
页数 文件大小 规格书
1页 39K
描述
NPN SILICON PLANAR MEDIUM POWER HIGH VOLTAGE TRANSISTOR

ZTX457 数据手册

  
NPN SILICON PLANAR MEDIUM POWER  
HIGH VOLTAGE TRANSISTOR  
ISSUE 2 – MARCH 1994  
ZTX457  
FEATURES  
*
*
*
300 Volt VCEO  
0.5 Amp continuous current  
Ptot= 1 Watt  
C
B
E
E-Line  
TO92 Compatible  
ABSOLUTE MAXIMUM RATINGS.  
PARAMETER  
SYMBOL  
VCBO  
VCEO  
VEBO  
ICM  
VALUE  
UNIT  
V
Collector-Base Voltage  
300  
Collector-Emitter Voltage  
Emitter-Base Voltage  
300  
V
5
V
Peak Pulse Current  
1
A
Continuous Collector Current  
Power Dissipation at Tamb=25°C  
Operating and Storage Temperature Range  
IC  
500  
1
mA  
W
°C  
Ptot  
Tj:Tstg  
-55 to +200  
ELECTRICAL CHARACTERISTICS (at T  
= 25°C unless otherwise stated).  
amb  
PARAMETER  
SYMBOL MIN.  
V(BR)CBO 300  
TYP.  
MAX. UNIT CONDITIONS.  
Collector-Base  
Breakdown Voltage  
V
V
V
IC=100µA, IE=0  
IC=10mA, IB=0*  
IE=100µA  
Collector-Emitter  
Breakdown Voltage  
VCEO(sus) 300  
Emitter-Base  
Breakdown Voltage  
V(BR)EBO  
ICBO  
5
Collector Cut-Off  
Current  
100  
10  
nA  
µA  
V
CB=200V  
VCB=200V, Tamb=100°C  
Emitter Cut-Off Current IEBO  
100  
0.3  
nA  
V
VEB=4V  
Collector-Emitter  
Saturation Voltage  
VCE(sat)  
VBE(sat)  
VBE(on)  
IC=100mA, IB=10mA*  
Base-Emitter  
Saturation Voltage  
1
1
V
V
IC=100mA, IB=10mA*  
IC=100mA, VCE=10V*  
Base-Emitter  
Turn On Voltage  
Static Forward Current hFE  
Transfer Ratio  
50  
50  
25  
IC=10mA, VCE=10V*  
IC=50mA, VCE=10V*  
IC=100mA, VCE=10V*  
300  
Transition Frequency  
fT  
75  
MHz  
IC=50mA, VCE=10V  
f=20MHz  
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle 2%  
3-181  

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