ZTX457

更新时间： 2024-02-20 20:03:14

品牌	Logo	应用领域
美台 - DIODES		晶体小信号双极晶体管高压 PC 局域网
页数	文件大小	规格书
1页	39K
描述
NPN SILICON PLANAR MEDIUM POWER HIGH VOLTAGE TRANSISTOR

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技术参数
数据手册

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ZTX457 技术参数

是否Rohs认证：	符合	生命周期：	Active
零件包装代码：	TO-92	包装说明：	TO-92 COMPATIBLE, E-LINE PACKAGE-3
针数：	3	Reach Compliance Code：	compliant
Factory Lead Time：	15 weeks	风险等级：	5.75
Base Number Matches：	1

ZTX457 数据手册

NPN SILICON PLANAR MEDIUM POWER

HIGH VOLTAGE TRANSISTOR

ISSUE 2 MARCH 1994

ZTX457

FEATURES

300 Volt V_CEO

0.5 Amp continuous current

P_tot= 1 Watt

E-Line

TO92 Compatible

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

SYMBOL

V_CBO

V_CEO

V_EBO

I_CM

VALUE

UNIT

Collector-Base Voltage

300

Collector-Emitter Voltage

Emitter-Base Voltage

300

Peak Pulse Current

Continuous Collector Current

Power Dissipation at T_amb=25°C

Operating and Storage Temperature Range

I_C

500

°C

P_tot

T_j:T_stg

-55 to +200

ELECTRICAL CHARACTERISTICS (at T

= 25°C unless otherwise stated).

amb

PARAMETER

SYMBOL MIN.

V_(BR)CBO300

TYP.

MAX. UNIT CONDITIONS.

Collector-Base

Breakdown Voltage

I_C=100µA, I_E=0

I_C=10mA, I_B=0*

I_E=100µA

Collector-Emitter

Breakdown Voltage

V_CEO(sus)300

Emitter-Base

Breakdown Voltage

V_(BR)EBO

I_CBO

Collector Cut-Off

Current

100

µA

_CB=200V

V_CB=200V, T_amb=100°C

Emitter Cut-Off Current I_EBO

100

0.3

V_EB=4V

Collector-Emitter

Saturation Voltage

V_CE(sat)

V_BE(sat)

V_BE(on)

I_C=100mA, I_B=10mA*

Base-Emitter

Saturation Voltage

I_C=100mA, I_B=10mA*

IC=100mA, V_CE=10V*

Base-Emitter

Turn On Voltage

Static Forward Current h_FE

Transfer Ratio

I_C=10mA, V_CE=10V*

I_C=50mA, V_CE=10V*

I_C=100mA, V_CE=10V*

300

Transition Frequency

f_T

MHz

I_C=50mA, V_CE=10V

f=20MHz

*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%

3-181

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