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ZSSC3026CI1B PDF预览

ZSSC3026CI1B

更新时间: 2022-02-26 11:18:05
品牌 Logo 应用领域
艾迪悌 - IDT /
页数 文件大小 规格书
51页 710K
描述
Low Power, High Resolution 16-Bit Sensor Signal Conditioner

ZSSC3026CI1B 数据手册

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ZSSC3026  
1 IC Characteristics  
1.1. Absolute Maximum Ratings  
Note: The absolute maximum ratings are stress ratings only. The ZSSC3026 might not function or be operable  
above the recommended operating conditions. Stresses exceeding the absolute maximum ratings might also  
damage the device. In addition, extended exposure to stresses above the recommended operating conditions  
might affect device reliability. IDT does not recommend designing to the “Absolute Maximum Ratings.”  
Table 1.1 Maximum Ratings  
PARAMETER  
SYMBOL  
VSS  
Min  
0
TYP  
MAX  
0
UNITS  
Voltage Reference  
V
V
Analog Supply Voltage  
VDD  
-0.4  
-0.5  
-100  
4000  
-50  
3.63  
VDD+0.5  
100  
-
Voltage at all Analog and Digital IO Pins  
VA_IO, VD_IO  
Iin  
VHBM1  
TSTOR  
V
Input Current into any Pin except SDA, CLK 1) and Supply Pins 2)  
Electrostatic Discharge Tolerance – Human Body Model (HBM1) 3)  
Storage Temperature  
mA  
V
125  
°C  
1) Latch-up current limit for CLK/SCLK and MOSI/SDA: ±70mA.  
2) Latch-up resistance; reference for pin is 0V.  
3) HBM1: C = 100pF charged to VHBM1 with resistor R = 1.5kin series based on MIL 883, Method 3015.7. ESD protection referring to the Human Body  
Model is tested with devices in ceramic dual in-line packages (CDIP) during product qualification.  
1.2. Operating Conditions  
Note: Unless indicated otherwise, the reference from all voltage specifications in this section is VSS  
.
Table 1.2 Operating Conditions  
PARAMETER  
SYMBOL  
VDD  
MIN  
TYP  
MAX  
3.6  
UNIT  
V
Supply Voltage  
VDD Rise Time  
1.8  
-
tVDD  
200  
1.8  
μs  
Bridge Current 1)  
IVDDB  
mA  
16.5  
85  
Operation Temperature Range  
TAMB  
CL  
-40  
-
°C  
nF  
External Capacitance between VDDB and VSS pins  
0.01  
50  
1)  
The power supply rejection is reduced if the sensor bridge consumes a current in the range of 16.5mA > IVDDB > 1.8mA.  
© 2016 Integrated Device Technology, Inc.  
6
March 28, 2016  
 
 
 
 
 
 
 
 
 

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