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ZDT6718TA PDF预览

ZDT6718TA

更新时间: 2024-11-25 19:54:19
品牌 Logo 应用领域
美台 - DIODES 开关光电二极管晶体管
页数 文件大小 规格书
3页 42K
描述
Power Bipolar Transistor, 2A I(C), 20V V(BR)CEO, 2-Element, NPN and PNP, Silicon, Plastic/Epoxy, 8 Pin, SM-8, 8 PIN

ZDT6718TA 技术参数

是否无铅: 含铅是否Rohs认证: 符合
生命周期:Active包装说明:SM-8, 8 PIN
针数:8Reach Compliance Code:not_compliant
ECCN代码:EAR99Factory Lead Time:15 weeks
风险等级:1.5最大集电极电流 (IC):2 A
集电极-发射极最大电压:20 V配置:SEPARATE, 2 ELEMENTS
最小直流电流增益 (hFE):100JESD-30 代码:R-PDSO-G8
JESD-609代码:e3湿度敏感等级:1
元件数量:2端子数量:8
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:NPN AND PNP
最大功率耗散 (Abs):2.5 W认证状态:Not Qualified
子类别:BIP General Purpose Small Signals表面贴装:YES
端子面层:Matte Tin (Sn)端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:40
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):140 MHzBase Number Matches:1

ZDT6718TA 数据手册

 浏览型号ZDT6718TA的Datasheet PDF文件第2页浏览型号ZDT6718TA的Datasheet PDF文件第3页 
SM-8 COMPLEMENTARY MEDIUM POWER  
ZDT6718  
HIGH GAIN TRANSISTORS  
ISSUE 1 - NOVEMBER 1995  
C1  
C1  
C2  
C2  
B1  
E1  
B2  
E2  
NPN  
PNP  
SM-8  
PARTMARKING DETAIL – T6718  
(8 LEAD SOT223)  
ABSOLUTE MAXIMUM RATINGS.  
PARAMETER  
SYMBOL  
VCBO  
VCEO  
VEBO  
ICM  
NPN  
20  
20  
5
PNP  
-20  
-20  
-5  
UNIT  
V
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
V
V
Peak Pulse Current  
6
-6  
A
Continuous Collector Current  
IC  
2
-1.5  
A
Operating and Storage Temperature  
Range  
Tj:Tstg  
-55 to +150  
°C  
THERMAL CHARACTERISTICS  
PARAMETER  
SYMBOL  
Ptot  
VALUE  
UNIT  
Total Power Dissipation at Tamb = 25°C*  
Any single die “on”  
Both die “on” equally  
2
2.5  
W
W
Derate above 25°C*  
Any single die “on”  
Both die “on” equally  
16  
20  
mW/ °C  
mW/ °C  
Thermal Resistance - Junction to Ambient*  
Any single die “on”  
Both die “on” equally  
62.5  
50  
°C/ W  
°C/ W  
* The power which can be dissipated assuming the device is mounted in a typical manner  
on a PCB with copper equal to 2 inches square.  
3 - 372  

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