ZDT694Q

更新时间： 2024-10-15 13:45:39

品牌	Logo	应用领域
美台 - DIODES		晶体管功率双极晶体管
页数	文件大小	规格书
3页	63K
描述
Dual NPN, 120V, 0.5A, SM-8

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ZDT694Q 数据手册

SM-8 DUAL NPN MEDIUM POWER

ZDT694

HIGH GAIN TRANSISTORS

ISSUE 1 - NOVEMBER 1995

C₁

C₂

B₁

E₁

B₂

E₂

SM-8

PARTMARKING DETAIL T694

(8 LEAD SOT223)

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

SYMBOL

V_CBO

V_CEO

V_EBO

I_CM

VALUE

UNIT

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

120

Peak Pulse Current

0.5

Continuous Collector Current

I_C

Operating and Storage Temperature Range

T_j:T_stg

-55 to +150

°C

THERMAL CHARACTERISTICS

PARAMETER

SYMBOL

P_tot

VALUE

UNIT

Total Power Dissipation at T_amb= 25°C*

Any single die on

Both die on equally

2.25

2.75

Derate above 25°C*

Any single die on

Both die on equally

mW/ °C

Thermal Resistance - Junction to Ambient*

Any single die on

Both die on equally

55.6

45.5

°C/ W

* The power which can be dissipated assuming the device is mounted in a typical manner

on a PCB with copper equal to 2 inches square.

3 - 342

12 3

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