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ZDT705TA PDF预览

ZDT705TA

更新时间: 2024-10-14 13:16:11
品牌 Logo 应用领域
捷特科 - ZETEX 晶体晶体管达林顿晶体管光电二极管
页数 文件大小 规格书
3页 51K
描述
Power Bipolar Transistor, 1A I(C), 120V V(BR)CEO, 2-Element, PNP, Silicon, Plastic/Epoxy, 8 Pin, SM-8, 8 PIN

ZDT705TA 技术参数

是否Rohs认证: 符合生命周期:Transferred
包装说明:SM-8, 8 PINReach Compliance Code:not_compliant
ECCN代码:EAR99风险等级:5.2
最大集电极电流 (IC):1 A集电极-发射极最大电压:120 V
配置:2 BANKS, DARLINGTON最小直流电流增益 (hFE):2000
JESD-30 代码:R-PDSO-G8JESD-609代码:e3
湿度敏感等级:1元件数量:2
端子数量:8最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:PNP功耗环境最大值:2.75 W
认证状态:Not Qualified表面贴装:YES
端子面层:MATTE TIN端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:40
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):160 MHzBase Number Matches:1

ZDT705TA 数据手册

 浏览型号ZDT705TA的Datasheet PDF文件第2页浏览型号ZDT705TA的Datasheet PDF文件第3页 
SM-8 DUAL PNP MEDIUM POWER  
ZDT705  
DARLINGTON TRANSISTORS  
ISSUE 1 - NOVEMBER 1995  
C1  
C1  
C2  
C2  
B1  
E1  
B2  
E2  
SM-8  
PARTMARKING DETAIL – T705  
(8 LEAD SOT223)  
ABSOLUTE MAXIMUM RATINGS.  
PARAMETER  
SYMBOL  
VALUE  
-140  
UNIT  
V
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
VCBO  
VCEO  
VEBO  
ICM  
-120  
V
-10  
V
Peak Pulse Current  
-4  
A
Continuous Collector Current  
IC  
-1  
A
Operating and Storage Temperature  
Range  
Tj:Tstg  
-55 to +150  
°C  
THERMAL CHARACTERISTICS  
PARAMETER  
SYMBOL  
Ptot  
VALUE  
UNIT  
Total Power Dissipation at Tamb = 25°C*  
Any single die “on”  
Both die “on” equally  
2.25  
2.75  
W
W
Derate above 25°C*  
Any single die “on”  
Both die “on” equally  
18  
22  
mW/ °C  
mW/ °C  
Thermal Resistance - Junction to Ambient*  
Any single die “on”  
Both die “on” equally  
55.6  
45.5  
°C/ W  
°C/ W  
* The power which can be dissipated assuming the device is mounted in a typical manner  
on a PCB with copper equal to 2 inches square.  
3 - 345  

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