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ZDT619TA PDF预览

ZDT619TA

更新时间: 2024-11-25 19:52:59
品牌 Logo 应用领域
美台 - DIODES 开关光电二极管晶体管
页数 文件大小 规格书
3页 2360K
描述
Power Bipolar Transistor, 2A I(C), 50V V(BR)CEO, 2-Element, NPN, Silicon, Plastic/Epoxy, 8 Pin, SM-8, 8 PIN

ZDT619TA 技术参数

生命周期:Obsolete包装说明:SMALL OUTLINE, R-PDSO-G8
针数:8Reach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.19
最大集电极电流 (IC):2 A集电极-发射极最大电压:50 V
配置:SEPARATE, 2 ELEMENTS最小直流电流增益 (hFE):100
JESD-30 代码:R-PDSO-G8JESD-609代码:e3
湿度敏感等级:1元件数量:2
端子数量:8封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:NPN
认证状态:Not Qualified表面贴装:YES
端子面层:MATTE TIN端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:40
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):165 MHzBase Number Matches:1

ZDT619TA 数据手册

 浏览型号ZDT619TA的Datasheet PDF文件第2页浏览型号ZDT619TA的Datasheet PDF文件第3页 
SM-8 DUAL NPN MEDIUM POWER  
ZDT619  
HIGH GAIN TRANSISTORS  
ISSUE 1 - NOVEMBER 1995  
C1  
C1  
C2  
C2  
B1  
E1  
B2  
E2  
SM-8  
PARTMARKING DETAIL – T619  
(8 LEAD SOT223)  
ABSOLUTE MAXIMUM RATINGS.  
PARAMETER  
SYMBOL  
VCBO  
VCEO  
VEBO  
ICM  
VALUE  
UNIT  
V
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
50  
50  
V
5
V
Peak Pulse Current  
6
2
A
Continuous Collector Current  
IC  
A
Operating and Storage Temperature Range  
Tj:Tstg  
-55 to +150  
°C  
THERMAL CHARACTERISTICS  
PARAMETER  
SYMBOL  
Ptot  
VALUE  
UNIT  
Total Power Dissipation at Tamb = 25°C*  
Any single die “on”  
Both die “on” equally  
2
2.5  
W
W
Derate above 25°C*  
Any single die “on”  
Both die “on” equally  
16  
20  
mW/ °C  
mW/ °C  
Thermal Resistance - Junction to Ambient*  
Any single die “on”  
Both die “on” equally  
62.5  
50  
°C/ W  
°C/ W  
* The power which can be dissipated assuming the device is mounted in a typical manner  
on a PCB with copper equal to 2 inches square.  
3 - 330  

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