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ZC806

更新时间: 2024-11-14 05:08:27
品牌 Logo 应用领域
APITECH 测试二极管变容二极管
页数 文件大小 规格书
1页 77K
描述
Variable Capacitance Diode, Very High Frequency to Ultra High Frequency, 100pF C(T), 25V, Silicon, Hyperabrupt, DO-7,

ZC806 技术参数

生命周期:Active包装说明:O-LALF-W2
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.04
其他特性:3% MATCHED SETS ARE AVAILABLE最小击穿电压:25 V
外壳连接:ISOLATED配置:SINGLE
二极管电容容差:20%最小二极管电容比:5
标称二极管电容:100 pF二极管元件材料:SILICON
二极管类型:VARIABLE CAPACITANCE DIODE频带:VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY
JEDEC-95代码:DO-7JESD-30 代码:O-LALF-W2
元件数量:1端子数量:2
最高工作温度:175 °C封装主体材料:GLASS
封装形状:ROUND封装形式:LONG FORM
最大功率耗散:0.4 W认证状态:Not Qualified
最小质量因数:75最大重复峰值反向电压:25 V
最大反向电流:2e-8 µA反向测试电压:20 V
子类别:Varactors表面贴装:NO
端子形式:WIRE端子位置:AXIAL
变容二极管分类:HYPERABRUPTBase Number Matches:1

ZC806 数据手册

  

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