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ZC806B-9M PDF预览

ZC806B-9M

更新时间: 2024-11-13 16:58:27
品牌 Logo 应用领域
APITECH 二极管
页数 文件大小 规格书
1页 76K
描述
Variable Capacitance Diode, Very High Frequency to Ultra High Frequency, 100pF C(T), Silicon, DO-7, DO-7, 2 PIN

ZC806B-9M 技术参数

生命周期:Active零件包装代码:DO-7
包装说明:O-LALF-W2针数:2
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.59
其他特性:HIGH RELIABILITY, 3% MATCHED SET OF NINE DIODES外壳连接:ISOLATED
配置:SINGLE二极管电容容差:5%
最小二极管电容比:5标称二极管电容:100 pF
二极管元件材料:SILICON二极管类型:VARIABLE CAPACITANCE DIODE
频带:VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCYJEDEC-95代码:DO-7
JESD-30 代码:O-LALF-W2元件数量:1
端子数量:2最高工作温度:175 °C
封装主体材料:GLASS封装形状:ROUND
封装形式:LONG FORM最大功率耗散:0.4 W
认证状态:Not Qualified最小质量因数:75
表面贴装:NO端子形式:WIRE
端子位置:AXIALBase Number Matches:1

ZC806B-9M 数据手册

  

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