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Z0107MNT1G

更新时间： 2024-11-24 07:45:11
品牌 Logo 应用领域
安森美 - ONSEMI 可控硅三端双向交流开关光电二极管栅
页数 文件大小 规格书
8页 172K
描述
Sensitive Gate Triac Series Silicon Bidirectional Thyristors

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Z0107MNT1G 数据手册

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Z0103MN, Z0107MN,  
Z0109MN  
Sensitive Gate Triac Series  
Silicon Bidirectional Thyristors  
Designed for use in solid state relays, MPU interface, TTL logic and  
other light industrial or consumer applications. Supplied in surface  
mount package for use in automated manufacturing.  
http://onsemi.com  
TRIAC  
1.0 AMPERE RMS  
600 VOLTS  
Features  
• Sensitive Gate Trigger Current in Four Trigger Modes  
• Blocking Voltage to 600 V  
• Glass Passivated Surface for Reliability and Uniformity  
• Surface Mount Package  
MT2  
MT1  
G
• These are Pb−Free Devices  
MARKING  
DIAGRAM  
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
J
4
Rating  
Symbol  
Value  
Unit  
Peak Repetitive Off−State Voltage (Note 1)  
V
600  
V
DRM,  
RRM  
SOT−223  
CASE 318E  
STYLE 11  
AYW  
10XMN G  
G
(Sine Wave, 50 to 60 Hz, Gate Open,  
V
T = −40 to +125°C)  
J
On−State Current RMS (T = 80°C)  
I
1.0  
8.0  
0.4  
A
A
C
T(RMS)  
1
2
3
(Full Sine Wave 50 to 60 Hz)  
A
Y
W
= Assembly Location  
= Year  
= Work Week  
Peak Non−repetitive Surge Current (One Full  
I
TSM  
Cycle Sine Wave, 60 Hz, T = 25°C)  
C
2
2
Circuit Fusing Considerations  
(Pulse Width = 8.3 ms)  
I t  
A s  
10XMN = Device Code  
x = 3, 7, 9  
G
= Pb−Free Package  
(Note: Microdot may be in either location)  
Average Gate Power (T = 80°C, t v 8.3 ms)  
P
1.0  
1.0  
W
A
C
G(AV)  
Peak Gate Current (t v 20 ms, T = +125°C)  
I
GM  
J
Operating Junction Temperature Range  
T
−40 to  
+125  
°C  
J
PIN ASSIGNMENT  
Storage Temperature Range  
T
−40 to  
°C  
stg  
1
2
3
4
Main Terminal 1  
Main Terminal 2  
Gate  
+150  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
Main Terminal 2  
1. V  
and V  
for all types can be applied on a continuous basis. Blocking  
DRM  
RRM  
voltages shall not be tested with a constant current source such that the  
voltage ratings of the devices are exceeded.  
ORDERING INFORMATION  
THERMAL CHARACTERISTICS  
†
Device  
Package  
Shipping  
Characteristic  
Symbol  
Max  
Unit  
Z0103MNT1G  
SOT−223  
(Pb−Free)  
1000/Tape & Reel  
1000/Tape & Reel  
1000/Tape & Reel  
Thermal Resistance, Junction−to−Ambient PCB  
R
156  
°C/W  
q
JA  
Mounted per Figure 1  
Z0107MNT1G  
Z0109MNT1G  
SOT−223  
(Pb−Free)  
Thermal Resistance, Junction−to−Tab Meas-  
ured on MT2 Tab Adjacent to Epoxy  
R
25  
°C/W  
°C  
q
JT  
SOT−223  
(Pb−Free)  
Maximum Device Temperature for  
Soldering Purposes for 10 Secs Maximum  
T
260  
L
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specification  
Brochure, BRD8011/D.  
©
Semiconductor Components Industries, LLC, 2009  
1
Publication Order Number:  
June, 2009 − Rev. 3  
Z0103MN/D  
 
12345678

中文翻译

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Z0107MNT1G 替代型号

型号 品牌 替代类型 描述 数据表
BT1308W-600D,115 NXP

类似代替

 BT1308W-600D
BT134W-600D,115 NXP

类似代替

 BT134W-600D
L401E3 LITTELFUSE

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