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| 型号 | 品牌 | 获取价格 | 描述 | 数据表 |
| YQ28419000J0G | AMPHENOL |
获取价格 |
暂无描述 |
|
| YQ284190A0J0G | AMPHENOL |
获取价格 |
Barrier Strip Terminal Block |
|
| YQ286130A0J0G | AMPHENOL |
获取价格 |
Barrier Strip Terminal Block |
|
| YQ286140A0J0G | AMPHENOL |
获取价格 |
Barrier Strip Terminal Block |
|
| YQ28616000J0G | AMPHENOL |
获取价格 |
Barrier Strip Terminal Block |
|
| YQ286160A0J0G | AMPHENOL |
获取价格 |
Barrier Strip Terminal Block |
|
| YQ2LAM10B | ROHM |
获取价格 |
The YQ2VWM10B is a highly efficient Schottky Barrier Diode that is designed improving the |
|
| YQ2LAM10BTF | ROHM |
获取价格 |
The YQ2VWM10BTF is a highly efficient Schottky Barrier Diode that is designed improving th |
|
| YQ2MM10A | ROHM |
获取价格 |
The YQ2MM10A is a highly efficient Schottky Barrier Diode that is designed improving the t |
|
| YQ2MM10ATF | ROHM |
获取价格 |
The YQ2MM10ATF is a highly efficient Schottky Barrier Diode that is designed improving the |
|
解析光耦仿真器：升级光耦合器技术的必要性
英伟达新一代Blackwell GPU过热问题致交付延迟
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
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