Datasheet > YQ30NL10SD

YQ30NL10SD

更新时间： 2024-11-28 17:01:59

品牌	Logo	应用领域
罗姆 - ROHM		/
页数	文件大小	规格书
8页	1852K
描述
The YQ30NL10SD is a highly efficient Schottky Barrier Diode that is designed improving the tradeof

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YQ30NL10SD 数据手册

YQ30NL10SD

Schottky Barrier Diode

Data sheet

●Outline

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100

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150

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FSM

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●Features

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High reliability

●Inner Circuit

Power mold type

Low V and low I

Low capacitance

●Application

Switching power supply

Freewheel diode

●Packaging Specifications

Packing

Embossed Tape

Reverse polarity protection

Reel Size(mm)

Taping Width(mm)

Quantity(pcs)

330

1000

●Structure

Trench MOS structure

Taping Code

Marking

YQ30NL10SD

(T =25ºC unless otherwise specified)

●Absolute Maximum Ratings

Parameter

Symbol

Conditions

Limits

Unit

Repetitive peak reverse voltage

Duty≦0.5

100

Reverse voltage

Reverse direct voltage

100

60Hzhalf sin waveform，resistive load，

Average rectified forward current

Peak forward surge current

Junction temperature⁽¹⁾

Storage temperature

T =110℃Max.

60Hzhalf sin waveform，non-repetitive，

150

FSM

T =25℃

150

℃

stg

-55 ～ 150

℃

Note(1) To avoid occurrence of thermal runaway， actual board is to be designed to fulfill dP /dT<1/R .

θJA

Attention

www.rohm.com

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1/5

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2023/09/05_Rev.001

12 3 4 5 6 7 8

中文翻译

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