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| 型号 | 品牌 | 获取价格 | 描述 | 数据表 |
| YQ384100A0J0G | AMPHENOL |
获取价格 |
Barrier Strip Terminal Block |
|
| YQ38414000J0G | AMPHENOL |
获取价格 |
Barrier Strip Terminal Block |
|
| YQ38610000J0G | AMPHENOL |
获取价格 |
Barrier Strip Terminal Block |
|
| YQ386130A0J0G | AMPHENOL |
获取价格 |
Barrier Strip Terminal Block |
|
| YQ38619000J0G | AMPHENOL |
获取价格 |
Barrier Strip Terminal Block |
|
| YQ3LAM10D | ROHM |
获取价格 |
The YQ30NL10SDFH is a highly efficient Schottky Barrier Diode that is designed improving t |
|
| YQ3LAM10DTF | ROHM |
获取价格 |
The YQ3LAM10DTF is a highly efficient Schottky Barrier Diode that is designed improving th |
|
| YQ3MM10B | ROHM |
获取价格 |
The YQ3MM10B is a highly efficient Schottky Barrier Diode that is designed improving the t |
|
| YQ3MM10BTF | ROHM |
获取价格 |
The YQ3MM10BTF is a highly efficient Schottky Barrier Diode that is designed improving the |
|
| YQ3RSM10SD | ROHM |
获取价格 |
The YQ3RSM10SD is a highly efficient Schottky Barrier Diode that is designed improving the |
|
解析光耦仿真器：升级光耦合器技术的必要性
英伟达新一代Blackwell GPU过热问题致交付延迟
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
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