YG881C02R

更新时间： 2024-09-17 07:46:03

品牌	Logo	应用领域
富士电机 - FUJI		肖特基二极管
页数	文件大小	规格书
3页	56K
描述
SCHOTTKY BARRIER DIODE

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中文翻译

获取价格

数据手册

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YG881C02R 数据手册

YG881C02R

(20V / 8A TO-22OF15)

Outline Drawings

SCHOTTKY BARRIER DIODE

+0.2

-0.1

4.5±0.2

2.7±0.2

10±0.5

ø3.2

1.2±0.2

0.6 ⁺^-^00.2

2.7±0.2

Features

Low VF

0.7±0.2

2.54±0.2

Super high speed switching.

High reliability by planer design.

JEDEC

EIAJ

SC-67

Applications

High speed power switching.

Connection Diagram

Maximum Ratings and Characteristics

Absolute Maximum Ratings

Symbol

V^RRM

VRSM

Viso

Conditions

Rating

Item

Unit

Repetitive peak reverse voltage

Repetitive peak surge reverse voltage

Isolating voltage

tw=500ns, duty=1/40

Terminals to Case,

AC. 1min.

1500

duty=1/2, Tc=103°C

Square wave

Average output current

Suege current

IFSM

Sine wave 10ms

+125

Operating junction temperature

Storage temperature

°C

Tstg

-40 to +125

Out put current of centertap full wave connection.

Electrical Characteristics (Ta=25°C Unless otherwise specified )

Item

Symbol

V^F

Conditions

IF=2.0A

Unit

Max.

0.39

10.0

5.0

Forward voltage drop **

Reverse current **

Thermal resistance

VR=VRRM

Rth(j-c)

Junction to case

°C/W

**Rating per element

Mechanical Characteristics

N · m

0.3 to 0.5

2.3

Recommended torque

Mounting torque

Weight

12 3

中文翻译

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