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XR1002

更新时间: 2024-11-07 03:13:55
品牌 Logo 应用领域
MIMIX /
页数 文件大小 规格书
10页 402K
描述
18.0-34.0 GHz GaAs MMIC Receiver

XR1002 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:ObsoleteReach Compliance Code:unknown
风险等级:5.84特性阻抗:50 Ω
构造:COMPONENT下变频增益-最小值:11 dB
最大中频频率:4000 MHz最小中频频率:
输入功率最小值(CW):LO 可调谐:YES
最大噪声指数:3.7 dB最大射频输入频率:34000 MHz
最小射频输入频率:18000 MHz射频/微波设备类型:DOWN CONVERTER
Base Number Matches:1

XR1002 数据手册

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18.0-34.0 GHz GaAs MMIC  
Receiver  
May 2006 - Rev 21-May-06  
R1002  
Features  
Chip Device Layout  
Fundamental High Dynamic Range Receiver  
Integrated Gain Control  
+4.0 dBm Input Third Order Intercept (IIP3)  
14.0 dB Conversion Gain  
3.0 dB Noise Figure  
25.0 dB Image Rejection  
100% On-Wafer RF, DC and Noise Figure Testing  
100% Visual Inspection to MIL-STD-883 Method 2010  
R1002  
General Description  
Mimix Broadband’s 18.0-34.0 GHz GaAs MMIC receiver has a 12.0 dB gain  
control range, a noise figure of 3.0 dB and 25.0 dB image rejection across  
the band.This device is a three stage LNA followed by a single transistor  
"Tee" attenuator and an image reject fundamental resistive HEMT mixer.  
At high signal levels the radio AGC system can be used to reduce the  
receiver gain improving the IIP3 providing for minimum distortion at  
modulation schemes as high as 256 QAM (ETSI-see Technical Note 1).  
The image reject mixer eliminates the need for a bandpass filter after the  
LNA to remove thermal noise at the image frequency. I and Q mixer  
outputs are provided and an external 90 degree hybrid is required to  
select the desired sideband.This MMIC uses Mimix Broadband’s 0.15 µm  
GaAs PHEMT device model technology, and is based upon electron  
beam lithography to ensure high repeatability and uniformity.The chip  
has surface passivation to protect and provide a rugged part with  
backside via holes and gold metallization to allow either a conductive  
epoxy or eutectic solder die attach process.This device is well suited for  
Millimeter-wave Point-to-Point Radio, LMDS, SATCOM and VSAT  
applications.  
Absolute Maximum Ratings  
Supply Voltage (Vd)  
Supply Current (Id)  
+6.0 VDC  
300 mA  
Gate Bias Voltage (Vg)  
Input Power (RF Pin)  
Storage Temperature (Tstg)  
Operating Temperature (Ta)  
Channel Temperature (Tch)  
+0.3 VDC  
0.0 dBm  
-65 to +165 OC  
3
-55 to MTTF Table  
3
MTTF Table  
(1) Measured using constant current, 10dB attenuation and  
-20dBm total input power.  
(2) At minimum attenuation.  
(3) Channel temperature affects a device's MTTF. It is  
recommended to keep channel temperature as low as  
possible for maximum life.  
Electrical Characteristics (AmbientTemperatureT = 25o C)  
Parameter  
Frequency Range (RF) Upper Side Band  
Frequency Range (RF) Lower Side Band  
Frequency Range (LO)  
Units  
GHz  
GHZ  
GHz  
GHz  
dB  
dB  
dB  
dBm  
dBc  
dB  
Min.  
18.0  
18.0  
14.0  
DC  
-
11.0  
0.0  
+12.0  
15.0  
-
Typ.  
-
-
-
-
10.0  
14.0  
-
+15.0  
25.0  
3.0  
40.0  
+4.0  
+4.5  
-0.5  
-1.2  
135  
Max.  
34.0  
34.0  
38.0  
4.0  
-
Frequency Range (IF)  
Input Return Loss RF (S11)  
Small Signal Conversion Gain RF/IF (S21)  
Attenuation  
LO Input Drive (PLO)  
Image Rejection  
2
-
12.0  
+18.0  
-
3.7  
-
Noise Figure (NF)  
Isolation LO/RF  
Input Third Order Intercept (IIP3)  
dB  
-
-
-
1
dBm  
VDC  
VDC  
VDC  
mA  
-
Drain Bias Voltage (Vd1,2)  
Gate Bias Voltage (Vg1,2) (Vg4=-0.8V)  
Control Bias Voltage (Vg3)  
+5.5  
0.0  
0.0  
270  
-1.0  
-1.5  
-
Supply Current (Id) (Vd=4.5V,Vg=-0.5V Typical)  
Page 1 of 10  
Mimix Broadband, Inc., 10795 Rockley Rd., Houston,Texas 77099  
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com  
Characteristic Data and Specifications are subject to change without notice. ©2006 Mimix Broadband, Inc.  
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept  
their obligation to be compliant with U.S. Export Laws.  

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