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XR1005-QD PDF预览

XR1005-QD

更新时间: 2024-02-27 18:28:39
品牌 Logo 应用领域
MIMIX /
页数 文件大小 规格书
7页 548K
描述
19.0-26.0 GHz GaAs Receiver QFN, 7x7 mm

XR1005-QD 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:ObsoleteReach Compliance Code:unknown
风险等级:5.2特性阻抗:50 Ω
构造:COMPONENT下变频增益-最小值:8 dB
最大中频频率:3000 MHz最小中频频率:
LO 可调谐:YES最大射频输入频率:26000 MHz
最小射频输入频率:19000 MHz射频/微波设备类型:DOWN CONVERTER
Base Number Matches:1

XR1005-QD 数据手册

 浏览型号XR1005-QD的Datasheet PDF文件第2页浏览型号XR1005-QD的Datasheet PDF文件第3页浏览型号XR1005-QD的Datasheet PDF文件第4页浏览型号XR1005-QD的Datasheet PDF文件第5页浏览型号XR1005-QD的Datasheet PDF文件第6页浏览型号XR1005-QD的Datasheet PDF文件第7页 
19.0-26.0 GHz GaAs Receiver  
QFN, 7x7 mm  
April 2006 - Rev 10-Apr-06  
R1005-QD  
Features  
Sub-harmonic Receiver  
Integrated LNA, LO Buffer, Image Reject Mixer  
7x7 mm, QFN  
+2.0 dBm LO Drive Level  
3.0 dB Noise Figure  
20.0 dB Image Rejection  
100% On-Wafer RF, DC and Noise Figure Testing  
General Description  
Mimix Broadbands 19.0-26.0 GHz GaAs packaged receiver has a  
noise figure of 3.0 dB and 20.0 dB image rejection across the band.  
This device is a two stage balanced LNA followed by an image reject  
sub-harmonic anti-parallel diode mixer and includes an integrated  
LO buffer amplifer.The image reject mixer eliminates the need for a  
bandpass filter after the LNA to remove thermal noise at the image  
frequency. The use of a sub-harmonic mixer makes the provision of  
the LO easier than for fundamental mixers at these frequencies. I and  
Q mixer outputs are provided and an external 90 degree hybrid is  
required to select the desired sideband. This device uses Mimix  
Broadbands 0.15 µm GaAs PHEMT device model technology, and is  
based upon electron beam lithography to ensure high repeatability  
and uniformity.The device comes in a 7x7 mm QFN Surface Mount  
Laminate Package offering excellent RF and thermal properties and  
is RoHS compliant. This device is well suited for Millimeter-wave  
Point-to-Point Radio, LMDS, SATCOM and VSAT applications.  
Absolute Maximum Ratings  
Supply Voltage (Vd)  
+4.5 VDC  
Supply Current (Id1,Id2)  
Gate Bias Voltage (Vg)  
Input Power (RF Pin)  
Storage Temperature (Tstg)  
Operating Temperature (Ta)  
Channel Temperature (Tch)  
180, 165 mA  
+0.3 VDC  
0.0 dBm  
-65 to +165 OC  
3
-55 to MTTF Table  
3
MTTF Table  
(3) Channel temperature affects a device's MTTF. It is  
recommended to keep channel temperature as low as  
possible for maximum life.  
Electrical Characteristics (AmbientTemperatureT = 25o C)  
Parameter  
Units  
GHz  
GHz  
GHz  
GHz  
dB  
Typ.  
-
-
-
-
12.0  
8.0  
+2.0  
20.0  
3.0  
40.0  
-7.0  
+4.0  
+4.0  
-0.3  
130  
116  
Max.  
26.0  
26.0  
14.5  
3.0  
-
-
-
-
-
Min.  
19.0  
19.0  
8.0  
DC  
-
-
-
-
-
-
-
-
-
Frequency Range (RF) Upper Side Band  
Frequency Range (RF) Lower Side Band  
Frequency Range (LO)  
Frequency Range (IF)  
Input Return Loss RF (S11)  
Small Signal Conversion Gain RF/IF (S21)2  
dB  
dBm  
dBc  
dB  
LO Input Drive (PLO)  
Image Rejection2  
Noise Figure (NF)2  
dB  
-
-
Isolation LO/RF @ LOx1/LOx2  
Input Third Order Intercept (IIP3)1,2  
Drain Bias Voltage (Vd1)  
Drain Bias Voltage (Vd2)  
Gate Bias Voltage (Vg1,2)  
dBm  
VDC  
VDC  
VDC  
mA  
+4.5  
+4.5  
+0.1  
155  
140  
-1.2  
-
-
Supply Current (Id1) (Vd1=4.0V,Vg=-0.3V Typical)  
Supply Current (Id2) (Vd2=4.0V,Vg=-0.3V Typical)  
mA  
(1) Measured using constant current.  
(2) Measured using LO Input drive level of +2.0 dBm.  
Page 1 of 7  
Mimix Broadband, Inc., 10795 Rockley Rd., Houston,Texas 77099  
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com  
Characteristic Data and Specifications are subject to change without notice. ©2006 Mimix Broadband, Inc.  
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept  
their obligation to be compliant with U.S. Export Laws.  

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