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XR1000

更新时间： 2024-02-10 08:16:02
品牌 Logo 应用领域
MIMIX 射频和微波射频上变频器射频下变频器微波上变频器微波下变频器
页数 文件大小 规格书
6页 491K
描述
17.0-27.0 GHz GaAs MMIC Receiver

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XR1000 技术参数

是否无铅： 不含铅是否Rohs认证： 符合
生命周期：ObsoleteReach Compliance Code：unknown
风险等级：5.2特性阻抗：50 Ω
构造：COMPONENT下变频增益-最小值：10 dB
最大中频频率：2000 MHz最小中频频率：
LO 可调谐：YES最大射频输入频率：27000 MHz
最小射频输入频率：17000 MHz射频/微波设备类型：DOWN CONVERTER
Base Number Matches：1

XR1000 数据手册

 浏览型号XR1000的Datasheet PDF文件第2页浏览型号XR1000的Datasheet PDF文件第3页浏览型号XR1000的Datasheet PDF文件第4页浏览型号XR1000的Datasheet PDF文件第5页浏览型号XR1000的Datasheet PDF文件第6页 
17.0-27.0 GHz GaAs MMIC  
Receiver  
May 2005 - Rev 13-May-05  
R1000  
Chip Device Layout  
Features  
Fundamental Integrated Receiver  
10.0 dB Conversion Gain  
3.5 dB Noise Figure  
15.0 dB Image Rejection  
60.0 dB LO/RF Isolation  
100% On-Wafer RF and DC Testing  
100% Visual Inspection to MIL-STD-883 Method 2010  
General Description  
Mimix Broadband’s 17.0-27.0 GHz GaAs MMIC receiver has a small signal  
conversion gain of 10.0 dB with a noise figure of 3.5 dB and 15.0 dB  
image rejection across the band.The device is a three stage LNA  
followed by an image reject fundamental mixer using Lange couplers to  
improve bandwidth.The image reject mixer eliminates the need for a  
bandpass filter after the LNA to remove thermal noise at the image  
frequency. I and Q mixer outputs are provided and an external 90  
degree hybrid is required to select the desired sideband.This MMIC uses  
Mimix Broadband’s 0.15 µm GaAs PHEMT device model technology, and  
is based upon electron beam lithography to ensure high repeatability  
and uniformity.The chip has surface passivation to protect and provide  
a rugged part with backside via holes and gold metallization to allow  
either a conductive epoxy or eutectic solder die attach process.This  
device is well suited for Millimeter-wave Point-to-Point Radio, LMDS,  
SATCOM and VSAT applications.  
Absolute Maximum Ratings  
Supply Voltage (Vd)  
+6.0 VDC  
Supply Current (Id)  
200 mA  
Gate Bias Voltage (Vg)  
Input Power (RF Pin)  
Storage Temperature (Tstg)  
Operating Temperature (Ta)  
Channel Temperature (Tch)  
+0.3 VDC  
0 dBm  
-65 to +165 OC  
2
-55 to MTTF Table  
2
MTTF Table  
(2) Channel temperature affects a device's MTTF. It is  
recommended to keep channel temperature as low as  
possible for maximum life.  
Electrical Characteristics (AmbientTemperatureT = 25o C)  
Parameter  
Units  
GHz  
GHz  
GHz  
GHz  
dB  
dB  
dB  
dBm  
dBc  
dB  
Min.  
17.0  
17.0  
15.0  
DC  
-
-
-
-
-
-
-
-
-
Typ.  
-
-
-
Max.  
27.0  
27.0  
29.0  
2.0  
-
-
-
-
-
-
-
-
Frequency Range (RF) Upper Side Band  
Frequency Range (RF) Lower Side Band  
Frequency Range (LO)  
-
Frequency Range (IF)  
10.0  
8.0  
10.0  
+15.0  
15.0  
3.5  
60.0  
-15.0  
-6.0  
+3.0  
-0.5  
90  
Input Return Loss RF (S11)  
Input Return Loss LO (S22)  
Small Signal Conversion Gain RF/IF (S21)  
LO Input Drive (PLO)  
Image Rejection  
Noise Figure (NF)  
Isolation LO/RF  
dB  
1
dBm  
dBm  
VDC  
VDC  
mA  
Input Power for 1 dB Compression (P1dB)  
1
-
Input Third Order Intercept (IIP3)  
-
-1.0  
-
+5.5  
0.0  
180  
Drain Bias Voltage (Vd)  
Gate Bias Voltage (Vg)  
Supply Current (Id) (Vd=3.0V,Vg=-0.5V Typical)  
(1) Measured using constant current.  
Page 1 of 6  
Mimix Broadband, Inc., 10795 Rockley Rd., Houston,Texas 77099  
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com  
Characteristic Data and Specifications are subject to change without notice. ©2005 Mimix Broadband, Inc.  
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept  
their obligation to be compliant with U.S. Export Laws.  
123456

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