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XR1001

更新时间: 2024-02-27 03:01:48
品牌 Logo 应用领域
MIMIX 射频和微波射频上变频器射频下变频器微波上变频器微波下变频器
页数 文件大小 规格书
8页 1417K
描述
33.0-40.0 GHz GaAs MMIC Receiver

XR1001 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:ObsoleteReach Compliance Code:unknown
风险等级:5.24特性阻抗:50 Ω
构造:COMPONENT下变频增益-最小值:1 dB
最大中频频率:3000 MHz最小中频频率:
LO 可调谐:YES最大射频输入频率:40000 MHz
最小射频输入频率:34000 MHz射频/微波设备类型:DOWN CONVERTER
Base Number Matches:1

XR1001 数据手册

 浏览型号XR1001的Datasheet PDF文件第2页浏览型号XR1001的Datasheet PDF文件第3页浏览型号XR1001的Datasheet PDF文件第4页浏览型号XR1001的Datasheet PDF文件第5页浏览型号XR1001的Datasheet PDF文件第6页浏览型号XR1001的Datasheet PDF文件第7页 
33.0-40.0 GHz GaAs MMIC  
Receiver  
May 2005 - Rev 13-May-05  
R1001  
Features  
Chip Device Layout  
Sub-Harmonic Receiver  
9.0 dB Conversion Gain  
4.0 dB Noise Figure  
12.0 dB Image Rejection  
100% On-Wafer RF, DC and Noise Figure Testing  
100% Visual Inspection to MIL-STD-883  
Method 2010  
R1001  
General Description  
Mimix Broadbands 33.0-40.0 GHz GaAs MMIC receiver has a small  
signal conversion gain of 9.0 dB with a noise figure of 4.0 dB and 12.0  
dB image rejection across the band.The device is a two stage LNA  
followed by a pair of sub-harmonic mixers, configured to form an image  
reject mixer which requires an LO at 15.5-21.5 GHz.The image reject  
mixer eliminates the need for a bandpass filter after the LNA to remove  
thermal noise at the image frequency.The use of a sub-harmonic mixer  
makes the provision of the LO easier than for fundamental mixers at  
these frequencies. I and Q mixer outputs are provided and an external  
90 degree hybrid is required to select the desired sideband.This MMIC  
uses Mimix Broadbands 0.15 µm GaAs PHEMT device model  
technology, and is based upon electron beam lithography to ensure  
high repeatability and uniformity.The chip has surface passivation to  
protect and provide a rugged part with backside via holes and gold  
metallization to allow either a conductive epoxy or eutectic solder die  
attach process.This device is well suited for Millimeter-wave Point-to-  
Point Radio, LMDS, SATCOM and VSAT applications.  
Absolute Maximum Ratings  
Supply Voltage (Vd)  
+6.0 VDC  
Supply Current (Id)  
70 mA  
Gate Bias Voltage (Vg)  
Input Power (RF Pin)  
Storage Temperature (Tstg)  
Operating Temperature (Ta)  
Channel Temperature (Tch)  
+0.3 VDC  
0 dBm  
-65 to +165 OC  
3
-55 to MTTF Table  
3
MTTF Table  
(3) Channel temperature affects a device's MTTF. It is  
recommended to keep channel temperature as low as  
possible for maximum life.  
Electrical Characteristics (AmbientTemperatureT = 25o C)  
Parameter  
Units  
GHz  
GHz  
GHz  
GHz  
dB  
Min.  
34.0  
33.0  
15.5  
DC  
Typ.  
-
-
-
-
18.0  
9.0/9.0  
+12.0  
Max.  
40.0  
40.0  
21.5  
3.0  
-
-
Frequency Range (RF) Upper Side Band  
Frequency Range (RF) Lower Side Band  
Frequency Range (LO)  
Frequency Range (IF)  
-
Input Return Loss RF (S11)  
2
dB  
3.0/3.0  
+10.0  
10.0/6.0 14.0/12.0  
Small Signal Conversion Gain RF/IF (S21) (USB/LSB)  
LO Input Drive (PLO)  
dBm  
dBc  
dB  
+14.0  
2
-
-
-
Image Rejection (USB/LSB)  
-
-
-
4.0  
45.0  
-13.0  
+3.0  
-0.5  
30  
Noise Figure (NF)  
dB  
Isolation LO/RF @ LOX2  
Input Power for 1 dB Compression (P1dB)  
Drain Bias Voltage (Vd)  
Gate Bias Voltage (Vg)  
1
dBm  
VDC  
VDC  
mA  
-
-
-1.0  
-
+5.5  
0.0  
60  
Supply Current (Id) (Vd=3.0V,Vg=-0.5V Typical)  
(1) Measured using constant current.  
(2) Min/Max limits over 33.0-39.5 GHz  
Page 1 of 8  
Mimix Broadband, Inc., 10795 Rockley Rd., Houston,Texas 77099  
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com  
Characteristic Data and Specifications are subject to change without notice. ©2005 Mimix Broadband, Inc.  
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept  
their obligation to be compliant with U.S. Export Laws.  

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