5秒后页面跳转
XR1001-BD-EV1 PDF预览

XR1001-BD-EV1

更新时间: 2022-04-23 23:00:11
品牌 Logo 应用领域
MIMIX /
页数 文件大小 规格书
8页 289K
描述
33.0-40.0 GHz GaAs MMIC Receiver

XR1001-BD-EV1 数据手册

 浏览型号XR1001-BD-EV1的Datasheet PDF文件第2页浏览型号XR1001-BD-EV1的Datasheet PDF文件第3页浏览型号XR1001-BD-EV1的Datasheet PDF文件第4页浏览型号XR1001-BD-EV1的Datasheet PDF文件第5页浏览型号XR1001-BD-EV1的Datasheet PDF文件第6页浏览型号XR1001-BD-EV1的Datasheet PDF文件第7页 
33.0-40.0 GHz GaAs MMIC  
Receiver  
April 2007 - Rev 19-Apr-07  
R1001-BD  
Features  
Chip Device Layout  
Sub-Harmonic Receiver  
9.0 dB Conversion Gain  
4.0 dB Noise Figure  
12.0 dB Image Rejection  
R1001  
100% On-Wafer RF, DC and Noise Figure Testing  
100% Visual Inspection to MIL-STD-883  
Method 2010  
General Description  
Mimix Broadband’s 33.0-40.0 GHz GaAs MMIC receiver has a small  
signal conversion gain of 9.0 dB with a noise figure of 4.0 dB and 12.0  
dB image rejection across the band.The device is a two stage LNA  
followed by a pair of sub-harmonic mixers, configured to form an image  
reject mixer which requires an LO at 15.5-21.5 GHz.The image reject  
mixer eliminates the need for a bandpass filter after the LNA to remove  
thermal noise at the image frequency.The use of a sub-harmonic mixer  
makes the provision of the LO easier than for fundamental mixers at  
these frequencies. I and Q mixer outputs are provided and an external  
90 degree hybrid is required to select the desired sideband.This MMIC  
uses Mimix Broadband’s 0.15 µm GaAs PHEMT device model  
technology, and is based upon electron beam lithography to ensure  
high repeatability and uniformity.The chip has surface passivation to  
protect and provide a rugged part with backside via holes and gold  
metallization to allow either a conductive epoxy or eutectic solder die  
attach process.This device is well suited for Millimeter-wave  
Point-to-Point Radio, LMDS, SATCOM and VSAT applications.  
Absolute Maximum Ratings  
Supply Voltage (Vd)  
+6.0 VDC  
Supply Current (Id)  
70 mA  
Gate Bias Voltage (Vg)  
Input Power (RF Pin)  
Storage Temperature (Tstg)  
Operating Temperature (Ta)  
Channel Temperature (Tch)  
+0.3 VDC  
0 dBm  
-65 to +165 OC  
3
-55 to MTTF Table  
3
MTTF Table  
(3) Channel temperature affects a device's MTTF. It is  
recommended to keep channel temperature as low as  
possible for maximum life.  
Electrical Characteristics (AmbientTemperatureT = 25o C)  
Parameter  
Frequency Range (RF) Upper Side Band  
Frequency Range (RF) Lower Side Band  
Frequency Range (LO)  
Frequency Range (IF)  
Input Return Loss RF (S11)  
Units  
GHz  
GHz  
GHz  
GHz  
dB  
Min.  
34.0  
33.0  
15.5  
DC  
Typ.  
-
-
-
-
18.0  
9.0/9.0  
+12.0  
Max.  
40.0  
40.0  
21.5  
3.0  
-
-
-
2
Small Signal Conversion Gain RF/IF (S21) (USB/LSB)  
LO Input Drive (PLO)  
dB  
3.0/3.0  
+10.0  
10.0/6.0 14.0/12.0  
dBm  
dBc  
dB  
+14.0  
2
Image Rejection (USB/LSB)  
-
-
-
Noise Figure (NF)  
Isolation LO/RF @ LOX2  
Input Power for 1 dB Compression (P1dB)  
Drain Bias Voltage (Vd)  
Gate Bias Voltage (Vg)  
Supply Current (Id) (Vd=3.0V,Vg=-0.5V Typical)  
-
-
-
4.0  
45.0  
-13.0  
+3.0  
-0.5  
30  
dB  
1
dBm  
VDC  
VDC  
mA  
-
-
-1.0  
-
+5.5  
0.0  
60  
(1) Measured using constant current.  
(2) Min/Max limits over 33.0-39.5 GHz  
Page 1 of 8  
Mimix Broadband, Inc., 10795 Rockley Rd., Houston,Texas 77099  
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com  
Characteristic Data and Specifications are subject to change without notice. ©2007 Mimix Broadband, Inc.  
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept  
their obligation to be compliant with U.S. Export Laws.  

与XR1001-BD-EV1相关器件

型号 品牌 描述 获取价格 数据表
XR-1001CN ETC Analog Filter

获取价格

XR-1001CP ETC Analog Filter

获取价格

XR1001D ETC Analog Filter

获取价格

XR-1001D EXAR Switched Capacitor Filter, 1 Func, Butterworth, Lowpass, CMOS, PDSO8, PLASTIC, SOIC-8

获取价格

XR1002 MIMIX 18.0-34.0 GHz GaAs MMIC Receiver

获取价格

XR1002-BD MIMIX 17.65-33.65 GHz GaAs MMIC Receiver

获取价格