TPS628303
ZHCSNO6 –FEBRUARY 2023
www.ti.com.cn
7.5 Electrical Characteristics
TJ = –40°C to +125°C, VIN = 2.25 V to 5.5 V. Typical values are at TJ = 25°C and VIN = 5 V (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
SUPPLY
EN = VIN, IOUT = 0 mA, VOUT = 1.8 V,
MODE = GND, device not switching
IQ
Operating quiescent current
7
17
µA
ISD
VIN shutdown supply current
EN = low, TJ = -40 oC to 85 o
C
100
2.15
120
700
nA
V
VUVLO(+)
VUVLO(hys)
THERMAL SHUTDOWN
Rising UVLO threshold voltage (VIN
)
2.05
90
2.25
UVLO hysteresis (VIN
)
mV
TJ(SD)
Thermal shutdown threshold
Thermal shutdown hysteresis
TJ rising
150
20
°C
°C
TJ(HYS)
LOGIC PINs
VEN(+)
Rising EN voltage threshold
Falling EN voltage threshold
Rising MODE voltage threshold
Falling MODE voltage threshold
EN Input leakage current
0.715
0.715
V
V
VEN(-)
0.4
VMODE(+)
VMODE(-)
IEN(LKG)
IMODE(LKG)
STARTUP
tSS
V
0.4
100
100
V
VEN = HIGH
10
10
nA
nA
MODE Input leakage current
VMODE = HIGH
Internal fixed soft-start time
Enable delay time
From VOUT= 0 to VOUT= 95%
180
300
120
440
220
µs
µs
td(EN)
From EN HIGH to device starts switching
REFERENCE VOLTAGE
VFB
Feedback voltage accuracy
PWM mode
495
–1
–1
500
505
+1
mV
%
VFB
Feedback voltage accuracy
Feedback voltage accuracy
PWM mode
VFB
+2
%
PFM mode, COUT,eff ≥15 µF, L = 0.47µH
IFB(LKG)
IVOS(LKG)
POWER GOOD
FB input leakage current, adjustable version VFB = 0.5 V
10
70
nA
nA
VOS input leakage current
VEN = low
100
500
Rising power good threshold
voltage (output undervoltage)
VPG,UV(+)
VPG,UV(-)
VPG,OV(+)
VPG,OV(-)
td(PG)
Power Good low, VFB rising
Power Good high, VFB falling
Power Good high, VFB rising
Power Good low, VFB falling
94
90
96
92
98
94
%
%
%
%
µs
Falling power good threshold
voltage (output undervoltage)
Rising power good threshold
voltage (output overvoltage)
108
103
30
110
105
40
112
107
55
Falling power good threshold
voltage (output overvoltage)
High-to-low or low-to-high transition on the
PG pin
Power good deglitch delay
PG pin Leakage current when open drain
output is high
IPG(LKG)
VPG = 5.0 V
IPG = 1 mA
10
100
0.4
nA
V
VPG,OL
PG pin low-level output voltage
POWER STAGE
RDSON(HS)
RDSON(LS)
fSW
High-side MOSFET on-resistance
Low-side MOSFET on-resistance
Switching frequency, PWM mode
35
18
57
29
VIN ≥5 V
mΩ
mΩ
MHz
VIN ≥5 V
IOUT = 1 A, VOUT = 1.8 V
2.0
OVERCURRENT PROTECTION
IHS(OC)
High-side peak current limit
TPS628303
4.0
4.6
5.3
A
A
ILS(NOC)
Low-side negative current limit
Sinking current limit on LS FET
–2.0
–1.75
OUTPUT DISCHARGE
IDIS
Output discharge current on SW pin
VIN > 2 V, VSW = 0.4 V, EN = LOW
75
400
110
mA
%
OUTPUT OVP
Overvoltage-protection (OVP) threshold
voltage
VOVP
VFB rising; devices with OVP feature only
108
112
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