CTQ
Vishay Electro-Films
Thin Film Center-Tapped Resistors
FEATURES
• Wire bondable
Product may
not be to scale
• Center tap feature
• Chip size: 0.030 inches square
• Resistance range total: 10 Ω to 1 MΩ
• Resistor material: Tantalum nitride, self-passivating
• Moisture resistant
The CTQ series resistor chips offer a wide resistance range with
lower shunt capacitance than can be offered with the silicon
based resistors but only at a lower power level.
• Quartz substrate
The CTQ offers the designer flexibility in use as either a
single value resistor or as two resistor with a center tap
feature. The CTQs six bonding pads allows the user
increased layout flexibility.
• Low shunt capacitance < 0.1 pF
I
V
R
R
A
B
The CTQs are manufactured using Vishay Electro-Films
(EFI) sophisticated thin film equipment and manufacturing
technology. The CTQs are 100 % electrically tested and
visually inspected to MIL-STD-883.
V
V
I
APPLICATIONS
The CTQ center-tapped resistor chips are used mainly in feedback circuits of amplifiers where ratio matching, low shunt
capacitance and tracking between two resistors is critical.
For low values, the resistance of the six bonding pad configuration can vary, depending on the method of measurement used.
Vishay EFI measures low-value resistors by the four-wire kelvin technique.
TEMPERATURE COEFFICIENT OF RESISTANCE, VALUES AND TOLERANCES
Tightest Standard Tolerance Available
0.5 %
0.1 %
PROCESS CODE
CLASS H*
102
CLASS K*
132
25 ppm/°C
50 ppm/°C
100 ppm/°C
100
130
101
131
*MIL-PRF-38534 inspection criteria
10 Ω
25 Ω
100 Ω
360 kΩ 620 kΩ 1 MΩ
STANDARD ELECTRICAL SPECIFICATIONS
PARAMETER
TCR Tracking Between Halves (RA, RB)
Center Tap Ratio, RA/RB: Tolerance
2 ppm/°C*
1
1 % standard
Noise, MIL-STD-202, Method 308, 100 Ω - 250 kΩ
< 100 Ω or > 251 kΩ
- 35 dB typ.
- 20 db typ.
Moisture Resistance, MIL-STD-202, Method 106
Stability, 1000 h, + 125 °C, 30 mW
0.5 % max. ΔR/R
0.25 % max. ΔR/R
- 55 °C to + 125 °C
0.1 % max. ΔR/R
0.2 % max. ΔR/R
400 V
Operating Temperature Range
Thermal Shock, MIL-STD-202, Method 107, Test Condition F
High Temperature Exposure, + 150 °C, 100 h
Dielectric Voltage Breakdown
Insulation Resistance
1012 min.
Operating Voltage
200 V
DC Power Rating at + 70 °C (Derated to Zero at + 175 °C)
5 x Rated Power Short-Time Overload, + 25 °C, 5 s
*5 ppm/°C for R < 100. 20 ppm/°C for R < 20
60 mW
0.25 % max. ΔR/R %
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For technical questions, contact: efi@vishay.com
Document Number: 61030
Revision: 13-Mar-08