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XCTQ1303480AD PDF预览

XCTQ1303480AD

更新时间： 2024-11-06 16:12:27
品牌 Logo 应用领域
威世 - VISHAY 电阻器
页数 文件大小 规格书
3页 98K
描述
RES NET,THIN FILM,348 OHMS,200WV,.5% +/-TOL,-50,50PPM TC,0303 CASE

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XCTQ1303480AD 技术参数

是否无铅： 不含铅是否Rohs认证： 符合
生命周期：Active包装说明：SMT, 0303
Reach Compliance Code：unknownECCN代码：EAR99
风险等级：5.64构造：Chip
网络类型：Center Tap端子数量：6
最高工作温度：125 °C最低工作温度：-55 °C
封装高度：0.254 mm封装长度：0.762 mm
封装形式：SMT封装宽度：0.762 mm
包装方法：Tray额定功率耗散 (P)：0.06 W
电阻：348 Ω电阻器类型：ARRAY/NETWORK RESISTOR
系列：CTQ尺寸代码：0303
子类别：Array/Network Resistors温度系数：-50,50 ppm/ °C
端子面层：NOT SPECIFIED容差：0.5%
工作电压：200 VBase Number Matches：1

XCTQ1303480AD 数据手册

 浏览型号XCTQ1303480AD的Datasheet PDF文件第2页浏览型号XCTQ1303480AD的Datasheet PDF文件第3页 
CTQ  
Vishay Electro-Films  
Thin Film Center-Tapped Resistors  
FEATURES  
• Wire bondable  
Product may  
not be to scale  
• Center tap feature  
• Chip size: 0.030 inches square  
• Resistance range total: 10 Ω to 1 MΩ  
• Resistor material: Tantalum nitride, self-passivating  
• Moisture resistant  
The CTQ series resistor chips offer a wide resistance range with  
lower shunt capacitance than can be offered with the silicon  
based resistors but only at a lower power level.  
• Quartz substrate  
The CTQ offers the designer flexibility in use as either a  
single value resistor or as two resistor with a center tap  
feature. The CTQs six bonding pads allows the user  
increased layout flexibility.  
• Low shunt capacitance < 0.1 pF  
I
V
R
R
A
B
The CTQs are manufactured using Vishay Electro-Films  
(EFI) sophisticated thin film equipment and manufacturing  
technology. The CTQs are 100 % electrically tested and  
visually inspected to MIL-STD-883.  
V
V
I
APPLICATIONS  
The CTQ center-tapped resistor chips are used mainly in feedback circuits of amplifiers where ratio matching, low shunt  
capacitance and tracking between two resistors is critical.  
For low values, the resistance of the six bonding pad configuration can vary, depending on the method of measurement used.  
Vishay EFI measures low-value resistors by the four-wire kelvin technique.  
TEMPERATURE COEFFICIENT OF RESISTANCE, VALUES AND TOLERANCES  
Tightest Standard Tolerance Available  
0.5 %  
0.1 %  
PROCESS CODE  
CLASS H*  
102  
CLASS K*  
132  
25 ppm/°C  
50 ppm/°C  
100 ppm/°C  
100  
130  
101  
131  
*MIL-PRF-38534 inspection criteria  
10 Ω  
25 Ω  
100 Ω  
360 kΩ 620 kΩ 1 MΩ  
STANDARD ELECTRICAL SPECIFICATIONS  
PARAMETER  
TCR Tracking Between Halves (RA, RB)  
Center Tap Ratio, RA/RB: Tolerance  
2 ppm/°C*  
1
1 % standard  
Noise, MIL-STD-202, Method 308, 100 Ω - 250 kΩ  
< 100 Ω or > 251 kΩ  
- 35 dB typ.  
- 20 db typ.  
Moisture Resistance, MIL-STD-202, Method 106  
Stability, 1000 h, + 125 °C, 30 mW  
0.5 % max. ΔR/R  
0.25 % max. ΔR/R  
- 55 °C to + 125 °C  
0.1 % max. ΔR/R  
0.2 % max. ΔR/R  
400 V  
Operating Temperature Range  
Thermal Shock, MIL-STD-202, Method 107, Test Condition F  
High Temperature Exposure, + 150 °C, 100 h  
Dielectric Voltage Breakdown  
Insulation Resistance  
1012 min.  
Operating Voltage  
200 V  
DC Power Rating at + 70 °C (Derated to Zero at + 175 °C)  
5 x Rated Power Short-Time Overload, + 25 °C, 5 s  
*5 ppm/°C for R < 100. 20 ppm/°C for R < 20  
60 mW  
0.25 % max. ΔR/R %  
www.vishay.com  
82  
For technical questions, contact: efi@vishay.com  
Document Number: 61030  
Revision: 13-Mar-08  
123

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