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X3N191 PDF预览

X3N191

更新时间: 2024-11-16 20:40:39
品牌 Logo 应用领域
CALOGIC 放大器晶体管
页数 文件大小 规格书
2页 72K
描述
Small Signal Field-Effect Transistor, 0.05A I(D), 40V, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SORTED, DIE-7

X3N191 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:DIE包装说明:UNCASED CHIP, R-XUUC-N7
针数:7Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8542.90.00.00
风险等级:5.78配置:SEPARATE, 2 ELEMENTS
最小漏源击穿电压:40 V最大漏极电流 (Abs) (ID):0.05 A
最大漏极电流 (ID):0.05 A最大漏源导通电阻:300 Ω
FET 技术:METAL-OXIDE SEMICONDUCTOR最大反馈电容 (Crss):1 pF
JESD-30 代码:R-XUUC-N7元件数量:2
端子数量:7工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:UNSPECIFIED
封装形状:RECTANGULAR封装形式:UNCASED CHIP
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:P-CHANNEL
最大功率耗散 (Abs):0.3 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:YES
端子形式:NO LEAD端子位置:UPPER
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:AMPLIFIER
晶体管元件材料:SILICONBase Number Matches:1

X3N191 数据手册

 浏览型号X3N191的Datasheet PDF文件第2页 
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