Datasheet > X3T-OH048

X3T-OH048

更新时间： 2024-09-21 15:18:39

品牌	Logo	应用领域
恩智浦 - NXP		/
页数	文件大小	规格书
19页	1027K
描述
Magnetic field sensor

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数据手册

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X3T-OH048 数据手册

X3G-OH047; X3T-OH047;

X3G-OH048; X3T-OH048

Magnetic field sensor

Rev. 1 — 4 April 2011

Product specification

1. Product profile

1.1 General description

The X3G-OH047, X3G-OH048, X3T-OH047 and X3T-OH048 are sensitive magnetic field

sensors, employing the magneto-resistive effect of thin film permalloy. The sensors

contain two parallel supplied Wheatstone bridges at a relative angle of 45 to each other.

A rotating magnetic field in the surface parallel to the chip (x-y plane) will deliver two

independent sinusoidal output signals, one following a cos(2) and the other following

a sin(2) function,  being the angle between sensor and field direction (see Figure 5 and

Figure 6).

The X3G-OH047, X3G-OH048, X3T-OH047 and X3T-OH048 are suited for high precision

angle measurement applications under low field conditions (saturation field strength

25 kA/m).

The sensors can be operated at any frequency between DC and 1 MHz.

All type numbers shown in this data sheet are valid for a single-die (single sensor).

The double-die has two magnetic field sensors with electrical and magnetic parameters

which fulfill the specified single-die values and do not correlate to each other.

Table 1.

Product overview

Type number

X3G-OH047

X3G-OH048

X3T-OH047

X3T-OH048

Sensor

Packing

double-die

single-die

double-die

single-die

sawn wafer; on foil

taped on reel

12 3 4 5 6 7...19

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