X28HC64
64K, 8K x 8 Bit
®
Data Sheet
June 7, 2006
FN8109.1
• High reliability
—Endurance: 1 million cycles
—Data retention: 100 years
5 Volt, Byte Alterable EEPROM
FEATURES
• JEDEC approved byte-wide pin out
• Pb-free plus anneal available (RoHS compliant)
• 70ns access time
• Simple byte and page write
—Single 5V supply
DESCRIPTION
—No external high voltages or V control circuits
PP
The X28HC64 is an 8K x 8 EEPROM, fabricated with
Intersil’s proprietary, high performance, floating gate
CMOS technology. Like all Intersil programmable non-
volatile memories, the X28HC64 is a 5V only device. It
features the JEDEC approved pinout for byte-wide
memories, compatible with industry standard RAMs.
—Self-timed
—No erase before write
—No complex programming algorithms
—No overerase problem
• Low power CMOS
—40mA active current max.
—200µA standby current max.
• Fast write cycle times
—64-byte page write operation
—Byte or page write cycle: 2ms typical
—Complete memory rewrite: 0.25 sec. typical
—Effective byte write cycle time: 32µs typical
• Software data protection
• End of write detection
The X28HC64 supports a 64-byte page write operation,
effectively providing a 32µs/byte write cycle, and
enabling the entire memory to be typically written in 0.25
seconds. The X28HC64 also features DATA Polling and
Toggle Bit Polling, two methods providing early end of
write detection. In addition, the X28HC64 includes a
user-optional software data protection mode that further
enhances Intersil’s hardware write protect capability.
—DATA polling
—Toggle bit
Intersil EEPROMs are designed and tested for appli-
cations requiring extended endurance. Inherent data
retention is greater than 100 years.
PIN CONFIGURATIONS
LCC
PLCC
TSOP
Plastic DIP
Flat Pack
CERDIP
SOIC
A
A
A
A
A
A
A
A
A
I/O
I/O
I/O
NC
V
SS
NC
I/O
I/O
I/O
I/O
I/O
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
32
31
30
29
28
27
26
25
24
23
3
4
5
6
7
2
1
0
0
1
2
1
28
27
26
25
24
23
VCC
NC
A12
A7
4
3
2
1 32 31 30
12
2
WE
NC
A8
NC
NC
V
A6
A5
A4
A3
A2
A1
A0
5
29
A8
A9
3
X28HC64
6
7
28
27
CC
4
A6
NC
WE
NC
3
4
5
6
7
A11
NC
OE
A10
5
A9
A5
22
21
8
9
26
25
6
A11
A4
X28HC64
(Top View)
A
A
9
A
20
19
18
17
8
7
X28HC64 22
A3
OE
A10
10
11
24
23
CE
11
8
21
20
19
18
17
16
15
A2
A
OE
CE
10
9
A1
CE
I/O7
I/O6
12
13
22
21
NC
10
11
12
13
14
I/O7
I/O6
I/O5
I/O4
I/O3
A0
I/O0
PGA
14 15 16 17 18 19 20
I/O0
I/O1
I/O1
12
I/O2
13
I/O3
15
I/O5
17
I/O6
18
I/O2
VSS
I/O0
11
A0
10
VSS
14
I/O4
16
I/O7
19
A1
A3
A2
8
CE
20
A10
21
9
7
5
X28HC64
A4
6
OE
22
A11
23
(BOTTOM
VIEW)
A5
A6
A12
2
VCC
28
A9
24
A8
25
A7
3
WE
27
NC
26
NC
1
4
Bottom View
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1
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